Samsung MZ-1LB3T80 3.84 TB PM983 PCIe Gen3 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	1.3
Total Bytes Written	5466 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2400 MB/s
Random Read IOPS	540000
Random Write IOPS	50000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ1LB3T8HMLA-00007

Engineer's Note

Compared with the earlier MZ1LB3T8HMLA-00007, the Samsung PM983 MZ-1LB3T80 brings a clearer enterprise sweet spot at 3.84TB by pairing Samsung V-NAND 3D TLC with 1.3 DWPD and 5466TBW, giving infrastructure teams a more durable and capacity-efficient PCIe Gen3 x4 drop-in for long-life server deployments. Its 3200/2400 MB/s sequential throughput and 540K/50K IOPS profile make it especially strong for read-heavy virtualization, cloud boot volumes, and scale-out database tiers, where it offers a better balance of density, endurance, and predictable latency than typical same-generation mainstream TLC SSDs.

Endurance & Reliability

With an endurance rating of 5466 TBW and 1.3 DWPD, the MZ-1LB3T80 is built to handle sustained daily write activity over a long service life in typical enterprise and commercial workloads. In practical terms, this level of endurance is more than sufficient for use as a system drive or mixed-use business SSD for many years, providing confidence that normal operating writes will remain well within the drive’s design limits. For enterprise reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and protect mapping tables during unexpected power interruptions, reducing the risk of corruption or incomplete writes. Its UBER of 1.0E-17, together with a 2 million hour MTBF, indicates a very low probability of unrecoverable bit errors and strong long-term operational stability for business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface provides enough host bandwidth to keep database, virtualization, and scale-out storage workloads fed without creating a bus bottleneck.
2. Its 3200 MB/s sequential read performance accelerates large-file access, reducing startup and scan times for analytics, backup, and content delivery platforms.
3. With 540,000 K IOPS random read capability, the drive sustains fast response under highly concurrent small-block workloads such as OLTP, VDI, and metadata-heavy applications.
4. A typical latency of 85 µs helps minimize storage wait time, improving application responsiveness and QoS consistency in latency-sensitive enterprise environments.
5. Samsung V-NAND 3D TLC paired with a 1.3 DWPD endurance rating delivers a strong balance of flash density, cost efficiency, and write durability for mixed-read/write server deployments.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB Capacity positioning analysis: In this series, the 3.84 TB model sits at the sweet spot between entry density and high-capacity scaling. Compared with the 1.92 TB version, it gives much better space headroom for OS images, application data, logs, and growth buffering without changing the expected enterprise SATA performance profile. Compared with the 7.68 TB option, it typically delivers a more attractive cost-to-capacity balance while avoiding overprovisioning in mainstream deployments. It is especially well suited for mid-scale virtualization clusters, such as shared boot, monitoring, and database volumes for roughly 40 to 70 business workloads.

FAQ