Samsung MZ-3LO15T0 15.36 TB PM1743 PCIe Gen5 x4 E3.S Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1743
Capacity	15.36 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen5 x4
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	E3.S

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	28032 TBW

Performance

Sequential Read	14000 MB/s
Sequential Write	7100 MB/s
Random Read IOPS	2500000
Random Write IOPS	250000
Average Latency	80 μs

Reliability

Mean Time Between Failures	2.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR15TMHVA

Engineer's Note

Compared with the previous-generation MZWLR15TMHVA, the Samsung PM1743 MZ-3LO15T0 steps up to PCIe Gen5 x4 and delivers up to 14,000/7,100 MB/s with 2,500,000/250,000 IOPS, providing a clear generational gain in host bandwidth and read-intensive transaction performance. Its 15.36 TB capacity, 1 DWPD endurance, 28,032 TBW, and Samsung 6th-Gen 128-layer V-NAND make it a strong fit for high-density database, virtualization, and analytics nodes that need more performance per drive without sacrificing enterprise endurance.

Endurance & Reliability

With an endurance rating of 28,032 TBW, the MZ-3LO15T0 can absorb an exceptionally large amount of data writes over its usable life, making it far beyond the needs of typical OS, boot, and general enterprise application workloads. In practical terms, for common system-disk use, this level of endurance provides strong confidence for long-term deployment with substantial headroom before write wear becomes a concern. Its enterprise-grade reliability is further strengthened by Power Loss Protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and unclean shutdown issues. An UBER of 1.0E-17 means an extremely low rate of unrecoverable bit errors, supporting high data integrity expectations in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen5 x4 interface, paired with ultra-high sequential bandwidth, accelerates large-file streaming, checkpoint loading, and analytics ingestion so compute nodes spend less time waiting on storage.
2. The exceptional random read capability sustains massive parallel access with minimal contention, making it ideal for latency-sensitive databases, virtualization clusters, and high-concurrency AI inference workloads.
3. A 1 DWPD endurance rating provides predictable day-after-day write sustainability, giving enterprises a balanced profile for mixed-use deployments without overpaying for unnecessary endurance headroom.
4. Samsung 6th-Gen 128-layer 3D TLC V-NAND delivers an enterprise-optimized balance of density, efficiency, and reliability, enabling high-capacity scaling with consistent QoS in modern data centers.
5. Typical latency of 80 microseconds helps shorten storage response time at the transaction level, improving application snappiness for real-time services, OLTP systems, and performance-critical cloud workloads.

Capacity Sweet

Reference capacities in the same enterprise SSD family: Lower capacity: 7.68 TB Higher capacity: 30.72 TB Capacity positioning analysis: At 15.36 TB, this model sits at the sweet spot of the product line. Compared with 7.68 TB, it provides much better headroom for data growth, denser server consolidation, and longer refresh cycles without changing the storage tier. Compared with 30.72 TB, it keeps acquisition cost, rebuild exposure, and per-drive budget under tighter control while delivering essentially the same enterprise-class sequential and random performance profile. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for about 140 to 180 business VMs.

FAQ