Samsung MZ-7KH3T80 3.84 TB SM883 SATA 6Gb/s 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	SM883
Capacity	3.84 TB
Usage Class	Mixed Use

Interface

Host Interface	SATA 6Gb/s
Total Interface Bandwidth	6 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D MLC
Drive Writes Per Day	3
Total Bytes Written	21024 TBW

Performance

Sequential Read	540 MB/s
Sequential Write	520 MB/s
Random Read IOPS	97000
Random Write IOPS	29000
Average Latency	115 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ7KM3T8HMLP-00005

Engineer's Note

Compared with the previous-generation MZ7KM3T8HMLP-00005, the Samsung SM883 MZ-7KH3T80 moves to a newer V-NAND 3D MLC platform, pairing SATA 6Gb/s line-rate performance up to 540/520 MB/s with enterprise endurance of 3 DWPD and 21,024 TBW in a 3.84 TB capacity point. This makes it a stronger fit for write-intensive virtualized servers, OLTP databases, and mixed-read/write enterprise boot or caching tiers where higher sustained durability and near-interface-limit throughput matter more than raw PCIe bandwidth.

Endurance & Reliability

With an endurance rating of 21,024 TBW and 3 DWPD, the MZ-7KH3T80 is designed for sustained enterprise workloads and can comfortably handle frequent full-drive writes throughout its service life. In typical server or system-disk use, this level of endurance means buyers can expect long-term, worry-free operation, with ample write margin for many years of deployment. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is unexpectedly interrupted. Its UBER of 1.0E-17, together with a 2 million-hour MTBF, reflects a very low risk of unrecoverable read errors and strong overall dependability for business-critical environments.

Technical Specs & Insights

1. The SATA interface ensures broad drop-in compatibility with mainstream enterprise servers and storage arrays, simplifying upgrades without changing the existing backplane or controller ecosystem.
2. Its strong sequential read capability accelerates large-block workloads such as backup restores, media streaming, and analytics data scans, helping shorten batch-processing windows.
3. The high random read performance is well suited for virtualization, OLTP databases, and VDI environments where fast access to many small files directly improves user responsiveness.
4. With an endurance profile built for sustained daily rewrites, this drive is a practical fit for write-intensive enterprise applications that demand predictable lifespan and lower replacement frequency.
5. Samsung V-NAND 3D MLC paired with low typical latency delivers consistent response times and stable QoS under mixed workloads, which is critical for transactional systems and latency-sensitive services.

Capacity Sweet

Within this series, the next lower capacity reference is 1.92 TB, and the next higher capacity reference is 7.68 TB. With broadly similar enterprise-class sequential throughput and random IOPS across the range, the 3.84 TB model sits at the sweet spot. Compared with 1.92 TB, it gives much better headroom for dataset growth, VM sprawl, and overprovisioning flexibility. Compared with 7.68 TB, it usually delivers a more attractive cost-to-usable-capacity balance without overcommitting budget. It is especially well suited for mid-scale virtualization clusters, edge databases, or 40-60 mixed application instances.

FAQ