Samsung MZ-ILS3T2B 3.2TB PM1635a SAS 12Gb/s 2.5 inch Enterprise Solid State Drive

General

Brand	Samsung
Model	PM1635a
Capacity	3.2TB
Usage Class	Enterprise

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3bit MLC (TLC)
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	1350 MB/s
Sequential Write	1100 MB/s
Random Read IOPS	190000
Random Write IOPS	35000
Average Latency	110 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILS3T2HEGR

Engineer's Note

Compared with the previous-generation MZILS3T2HEGR, the Samsung PM1635a MZ-ILS3T2B delivers a more durable enterprise value point by combining 3.2TB of capacity with 3 DWPD and up to 17,520 TBW, giving architects more write headroom for long-life deployments. With SAS 12Gb/s connectivity, 1350/1100 MB/s sequential performance, and up to 190,000/35,000 IOPS, it is a strong choice for mixed-read/write virtualization, database, and transactional workloads that need SAS reliability with better endurance density than earlier-generation drives.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 3 DWPD, the MZ-ILS3T2B is designed to sustain intensive write workloads over its service life, making it well suited for enterprise systems that run continuously. In typical operating scenarios, this level of endurance means it can serve reliably as a system or application drive for many years without endurance becoming a practical concern. The MZ-ILS3T2B also includes enterprise-grade reliability features such as power loss protection (PLP), which helps preserve in-flight data and protect metadata integrity if power is suddenly interrupted. Its UBER rating of 1.0E-17, together with a 2 million hour MTBF, indicates an extremely low probability of uncorrectable bit errors and supports the high data integrity and operational stability expected in business-critical environments.

Technical Specs & Insights

1. The SAS 12Gb/s interface, paired with 1350 MB/s sequential read performance, provides stable shared-storage throughput for dual-controller arrays, accelerating backup, restore, and large dataset streaming in enterprise environments.
2. With 190,000 K IOPS random read capability, the drive can sustain responsive access under highly concurrent OLTP, virtualization, and metadata-heavy workloads where queue depth spikes are common.
3. A 3 DWPD endurance rating supports write-intensive enterprise use cases such as logging, caching, and mixed database workloads, helping maintain predictable service life under continuous daily writes.
4. Samsung V-NAND 3bit MLC (TLC) balances enterprise-grade capacity efficiency with mature flash management behavior, making it well suited for scale-out storage platforms that need both density and dependable consistency.
5. The 110 µs typical latency helps reduce storage wait time at the application layer, improving transaction responsiveness and making SLA-sensitive business systems feel noticeably more consistent under load.

Capacity Sweet

Lower capacity reference: 1.6TB Higher capacity reference: 6.4TB In this series, the 3.2TB model sits at the sweet spot for mainstream enterprise deployment. Compared with the 1.6TB version, it offers much better headroom for growth, reducing early capacity pressure and lowering the need for drive-level overprovisioning in mixed workloads. Compared with the 6.4TB option, it usually delivers a more attractive cost-to-usable-capacity ratio while keeping performance in the same enterprise class. This makes 3.2TB especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for about 60 to 80 business VMs.

FAQ