Samsung MZ-ILT1T9A 1.92 TB PM1643 SAS 12Gb/s 2.5 inch Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1643
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3bit MLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	2100 MB/s
Sequential Write	1700 MB/s
Random Read IOPS	400000
Random Write IOPS	40000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT1T9HMLH-00007

Engineer's Note

The Samsung PM1643 1.92TB (MZ-ILT1T9A) delivers a strong generational step over MZILT1T9HMLH-00007 by combining 12Gb/s SAS bandwidth with up to 2100/1700 MB/s throughput, 400K/40K IOPS, and 3504 TBW endurance in a 1 DWPD enterprise profile. Its use of Samsung V-NAND 3bit MLC gives this MPN a distinctive advantage for mixed read-centric virtualization, database, and scale-out server workloads, where higher usable capacity and stronger sustained performance are required without moving to a higher-endurance class SSD.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, the MZ-ILT1T9A is designed to support writing its full capacity once per day for about five years, which is well above the write volume of typical OS, boot, and mainstream business application workloads. In practical terms, for use as a system drive or general enterprise read/write storage, this level of endurance provides ample headroom for long-term, worry-free operation under normal deployment conditions. Its power-loss protection (PLP) helps preserve in-flight data and critical metadata during an unexpected power interruption, reducing the risk of corruption and improving service continuity. Combined with an enterprise-class UBER of 1.0E-17 and a 2 million hour MTBF, it delivers a very low probability of unrecoverable read errors and strong reliability expectations for business-critical environments.

Technical Specs & Insights

1. The SAS 12Gb/s interface fits naturally into dual-controller enterprise storage, enabling high availability, predictable interoperability, and easier lifecycle management in existing server and array platforms.
2. Its strong sequential read throughput speeds up backup restores, analytics scans, and large VM image loading, helping data-intensive applications reach usable state faster.
3. The high random-read capability keeps databases, VDI farms, and virtualized clusters responsive even when many users and workloads hit the drive at once.
4. A 1 DWPD endurance rating is well suited to read-heavy enterprise environments, providing dependable daily rewrite headroom for mixed production workloads without overpaying for unused write endurance.
5. Samsung V-NAND 3bit MLC paired with low typical latency delivers a balanced mix of capacity efficiency, consistent response time, and enterprise-grade flash behavior for latency-sensitive applications.

Capacity Sweet

Lower capacity reference: 960 GB Higher capacity reference: 3.84 TB At 1.92 TB, MZ-ILT1T9A sits in the sweet spot of the series. Compared with the 960 GB model, it gives much better headroom for OS, application, log, and growth allocation, reducing early capacity pressure in enterprise deployments. Compared with the 3.84 TB option, it usually delivers the best balance of acquisition cost, usable space, and standard enterprise performance, since sequential throughput and random IOPS remain broadly similar across capacities. This makes 1.92 TB especially well suited for medium-scale virtualization clusters, mixed database nodes, or dense application servers supporting around 40 to 60 business workloads.

FAQ