Samsung MZ-ILT3T8C 3.84TB PM1643a Series SAS 12Gb/s 2.5 15mm Enterprise Data Center / Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1643a Series
Capacity	3.84TB
Usage Class	Enterprise Data Center / Read Intensive

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5 15mm

Flash & Endurance

NAND Flash	Samsung V-NAND TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	2100 MB/s
Sequential Write	2000 MB/s
Random Read IOPS	450000
Random Write IOPS	60000
Average Latency	120 μs

Reliability

Mean Time Between Failures	2.0 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT3T8HALS

Engineer's Note

Compared with the earlier MZILT3T8HALS, the MZ-ILT3T8C in Samsung’s PM1643a Series refreshes the 3.84TB SAS tier with Samsung V-NAND TLC and delivers up to 2100/2000 MB/s plus 450,000/60,000 IOPS for a stronger mixed-workload performance profile. Its 1 DWPD endurance and 7008 TBW make it a particularly strong fit for enterprise virtualization clusters, transactional databases, and read-heavy storage arrays that need reliable 12Gb/s SAS performance with better capacity-performance density than the previous generation.

Endurance & Reliability

With an endurance rating of 7008 TBW, the MZ-ILT3T8C is designed to handle approximately its full capacity in writes every day under typical enterprise usage, making it well suited for write-intensive system, boot, and mixed-workload applications. In practical terms, for normal server OS, virtualization, and business application workloads, this level of endurance provides long-term peace of mind and ample write headroom over the drive’s service life. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and protects metadata integrity if power is suddenly interrupted, reducing the risk of corruption and unplanned recovery events. Its UBER of 1.0E-17 means an extremely low unrecoverable bit error rate, supporting higher data integrity expectations in business-critical storage environments.

Technical Specs & Insights

1. The dual-port SAS architecture, paired with strong sequential bandwidth, accelerates backup, restore, and large dataset streaming while preserving the high-availability path redundancy required in enterprise storage arrays.
2. Its high random-read capability lets databases, virtualization clusters, and metadata-heavy applications serve far more concurrent requests with fewer performance bottlenecks during peak demand.
3. A write endurance rating designed for one full overwrite per day makes it a practical fit for mixed-use enterprise workloads that need predictable lifespan without moving to a higher-cost write-optimized tier.
4. Samsung V-NAND TLC delivers a strong balance of density, power efficiency, and cost, helping data centers scale capacity economically while maintaining enterprise-class flash behavior.
5. The low typical response time reduces storage wait states, improving application responsiveness for latency-sensitive workloads such as OLTP, VDI, and real-time analytics.

Capacity Sweet

Lower capacity reference: 1.92TB Higher capacity reference: 7.68TB Within this SSD family, the 3.84TB model sits in the sweet spot for mainstream enterprise deployments. Compared with the 1.92TB version, it provides much better headroom for OS images, application growth, logs, and buffer space, reducing early capacity pressure in shared environments. Compared with the 7.68TB option, it typically delivers a better balance of acquisition cost, usable capacity, and standard enterprise performance consistency. This makes it especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for about 40 to 60 general-purpose virtual machines.

FAQ