Samsung MZ-ILT7T6B 7.68 TB PM1643A SAS 12Gb/s 2.5" Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1643A
Capacity	7.68 TB
Usage Class	Read Intensive

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 92-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	14016 TBW

Performance

Sequential Read	2100 MB/s
Sequential Write	1800 MB/s
Random Read IOPS	400000
Random Write IOPS	50000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT7T6HALA

Engineer's Note

Compared with the previous-generation MZILT7T6HALA, the Samsung PM1643A (MZ-ILT7T6B) leverages 5th-Gen 92-layer V-NAND to deliver a stronger balance of density, endurance, and SAS performance, providing 7.68 TB capacity, 1 DWPD / 14,016 TBW, and up to 2,100/1,800 MB/s throughput. Its 400,000/50,000 IOPS profile makes it a more capable choice than typical same-class SAS SSDs for virtualization clusters, OLTP databases, and mixed read/write enterprise workloads that need predictable latency with high-capacity consolidation.

Endurance & Reliability

With an endurance rating of 14,016 TBW and 1 DWPD, the MZ-ILT7T6B is designed to sustain very heavy write activity, equivalent to writing the full drive capacity once per day throughout its rated service life. In typical OS, boot, application, and general enterprise workloads—where daily writes are usually much lower than this—it provides ample endurance headroom for long-term, worry-free deployment. For enterprise reliability, built-in power loss protection (PLP) helps preserve in-flight data and prevents metadata corruption if power is unexpectedly interrupted, which is especially important for servers and storage systems. Its UBER of 1.0E-17 indicates an extremely low unrecoverable bit error rate, and together with the 2 million hour MTBF, it reflects a drive engineered for dependable data integrity and stable 24/7 operation.

Technical Specs & Insights

1. The SAS 12Gb/s interface, paired with 2100 MB/s sequential read performance, enables reliable high-speed data streaming for transactional databases, virtualization clusters, and dual-controller enterprise storage arrays.
2. With 400,000 K IOPS random read capability, the drive can sustain heavy concurrent access patterns, helping reduce query bottlenecks in OLTP, metadata-intensive, and VDI environments.
3. A 1 DWPD endurance rating makes it well suited for read-centric enterprise workloads that still require predictable write tolerance across the full service life of the SSD.
4. Samsung V-NAND 5th-Gen 92-layer 3D TLC provides a strong balance of capacity density, power efficiency, and cost effectiveness, making it ideal for scale-out data center deployments.
5. The typical latency of 100 µs helps accelerate application responsiveness, supporting faster storage-side acknowledgments for latency-sensitive enterprise services and mixed workload consolidation.

Capacity Sweet

Lower capacity reference: 3.84 TB Higher capacity reference: 15.36 TB At 7.68 TB, the MZ-ILT7T6B sits in the sweet spot of the family. Compared with the 3.84 TB model, it gives meaningfully better headroom for data growth, longer refresh cycles, and denser deployments without changing the expected enterprise-grade throughput or IOPS profile. Compared with the 15.36 TB option, it preserves most of the practical performance experience while offering a more efficient cost-per-drive and easier budget scaling. It is especially well suited for mid-sized virtualization clusters, such as shared storage for roughly 40 to 60 mixed-workload virtual machines.

FAQ