Samsung MZ-PLJ1T60 1.6 TB PM1735 PCIe Gen4 x8 HHHL (AIC) Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	1.6 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x8
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	HHHL (AIC)

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 92-layer 3D TLC
Drive Writes Per Day	3
Total Bytes Written	8760 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	2400 MB/s
Random Read IOPS	1000000
Random Write IOPS	250000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZPLK1T6HQAT

Engineer's Note

Compared with the previous-generation MZPLK1T6HQAT, the Samsung PM1735 MZ-PLJ1T60 advances to PCIe Gen4 x8 and 5th-Gen 92-layer V-NAND, delivering up to 7,000 MB/s sequential read and 1,000,000 random read IOPS for a clear increase in host-side throughput and transaction density. Its 1.6 TB capacity, 3 DWPD endurance, and 8,760 TBW make it a strong fit for mixed-read/write database, virtualization, and analytics tiers that need enterprise durability without sacrificing low-latency performance.

Endurance & Reliability

With an endurance rating of 8,760 TBW and 3 DWPD, the MZ-PLJ1T60 is built for sustained enterprise write workloads and can reliably handle writing its full capacity three times per day throughout its rated service life. In typical server or system-disk use, this level of endurance provides a very large margin, making it a dependable choice for long-term operation with low concern about write wear. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects mapping tables during unexpected power interruptions. Its UBER of 1.0E-17 and 2 million-hour MTBF indicate a very low probability of uncorrectable bit errors and strong overall reliability for business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x8 interface provides the host bandwidth needed to keep multi-core servers and virtualization clusters fed under sustained, data-intensive workloads without creating a storage bottleneck.

2. With sequential read performance of up to 7000 MB/s, this SSD accelerates large-file streaming, backup recovery, and analytics scans, helping enterprise platforms move massive datasets much faster.

3. Delivering up to 1,000,000K random read IOPS, it is well suited for highly concurrent databases, OLTP systems, and cloud platforms where fast small-block access directly improves transaction responsiveness.

4. Rated for 3 DWPD endurance, the drive is built for write-intensive enterprise use cases such as logging, caching, and mixed-workload infrastructure that demand consistent reliability over years of operation.

5. Samsung 5th-Gen 92-layer 3D TLC V-NAND, paired with a typical latency of 95 µs, enables a strong balance of density, efficiency, and predictably fast response times for latency-sensitive enterprise applications.

Capacity Sweet

Lower-capacity reference: 800 GB Higher-capacity reference: 3.2 TB Within this SSD family, the 1.6 TB model sits at the sweet spot for mainstream enterprise deployment. Compared with the 800 GB version, it gives much better headroom for OS images, application growth, snapshots, and temporary workload spikes, reducing early capacity pressure. Compared with the 3.2 TB option, it usually delivers a more attractive cost-to-usable-capacity balance while keeping broadly similar enterprise-class sequential and random performance. In practice, 1.6 TB is well suited for a mid-size virtualization cluster, such as hosting boot and application volumes for about 40 to 60 virtual machines.

FAQ