General

Brand	Samsung
Model	PM1725b
Capacity	1.6TB
Usage Class	Enterprise

Interface

Host Interface	NVMe
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	HHHL

Flash & Endurance

NAND Flash	TLC V-NAND
Drive Writes Per Day	5
Total Bytes Written	14600 TBW

Performance

Sequential Read	6300 MB/s
Sequential Write	2600 MB/s
Random Read IOPS	1000000
Random Write IOPS	180000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-PLL1T6A

Engineer's Note

Compared with the earlier MZ-PLL1T6A, the MZ-PLL1T6B PM1725b delivers a clear generational step in enterprise NVMe capability by combining 6.3 GB/s sequential read throughput, 1,000,000 random-read IOPS, and 14.6 PBW endurance at 5 DWPD in the same 1.6TB TLC V-NAND class. That makes it a stronger fit for read-intensive databases, virtualization clusters, and latency-sensitive analytics workloads that need higher transaction density and longer write life than typical same-tier TLC SSDs.

Endurance & Reliability

With an endurance rating of 14,600 TBW and 5 DWPD, the MZ-PLL1T6B is designed for sustained enterprise write-intensive workloads and can safely handle full-drive writes multiple times per day throughout its service life. In typical real-world use, this level of endurance means it can operate as a system disk or mixed-use business storage for many years with substantial write headroom, giving procurement teams strong confidence in long-term durability. The drive also includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity during unexpected power interruptions, reducing the risk of corruption or unplanned downtime. Its enterprise-class UBER of 1.0E-17, together with a 2 million hour MTBF, indicates an extremely low probability of unrecoverable bit errors and supports dependable operation in business-critical environments.

Technical Specs & Insights

1. The NVMe interface paired with 6300 MB/s sequential read bandwidth accelerates large-block data movement, reducing VM boot storms, database recovery time, and analytics dataset loading in enterprise servers.
2. With up to 1,000,000K random read IOPS, the drive sustains extremely high transaction concurrency, helping OLTP databases, virtual desktop farms, and metadata-heavy workloads respond faster under peak demand.
3. A 5 DWPD endurance rating makes it well suited for write-intensive enterprise environments, enabling years of steady service in logging, caching, and mixed-workload infrastructure without premature wear concerns.
4. TLC V-NAND provides a strong balance of cost efficiency, density, and consistent performance, allowing data centers to scale flash capacity economically while maintaining enterprise-class reliability.
5. The 90 µs typical latency supports faster per-request response, which is especially valuable for latency-sensitive applications such as real-time analytics, high-frequency transactions, and performance-tier storage arrays.

Capacity Sweet

Within the MZ-PLL series, the closest lower-capacity reference is 800GB, while the next higher-capacity option is 3.2TB; both typically deliver broadly similar enterprise-class sequential throughput and random IOPS to the 1.6TB model. In this lineup, 1.6TB is the sweet spot: it offers much better headroom than 800GB for OS images, logs, metadata, and growth buffers, yet avoids the higher acquisition cost of 3.2TB where capacity may be underused. It is especially well suited for medium-density virtualization clusters, such as hosting boot and application volumes for about 40–60 general-purpose virtual machines.

FAQ