Samsung MZ-PLL3T2B 3.2 TB PM1725b PCIe Gen3 x8 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1725b
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x8
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	5
Total Bytes Written	29200 TBW

Performance

Sequential Read	6200 MB/s
Sequential Write	2900 MB/s
Random Read IOPS	1000000
Random Write IOPS	180000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL3T2HEHP-00007

Engineer's Note

Compared with the previous-generation MZWLL3T2HEHP-00007, the Samsung PM1725b (MZ-PLL3T2B) delivers a clear generational step up in host-side performance with PCIe Gen3 x8 bandwidth, up to 6,200/2,900 MB/s sequential throughput, and 1,000,000 random-read IOPS, making it a stronger choice for latency-sensitive databases and virtualization clusters. Its standout value is combining that speed with Samsung V-NAND 3D TLC endurance at 5 DWPD and 29,200 TBW, giving architects a rare balance of high performance and write durability in the 3.2 TB class.

Endurance & Reliability

With an endurance rating of 29,200 TBW and 5 DWPD, the MZ-PLL3T2B is built for sustained heavy-write enterprise workloads and can support rewriting its full capacity five times per day within its rated service life. In practical terms, this level of endurance is far beyond typical OS, boot, logging, and general application workloads, giving buyers strong confidence for long-term daily operation with substantial write headroom. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protect mapping information during an unexpected power interruption. Its UBER of 1.0E-17 and 2 million-hour MTBF indicate a very low probability of unrecoverable bit errors and a design aligned with dependable, data-center-class operation.

Technical Specs & Insights

1. The PCIe Gen3 x8 host interface provides ample lane bandwidth to keep enterprise servers fed with data, reducing storage bottlenecks in analytics, virtualization, and scale-out application environments.
2. Its strong sequential read performance accelerates large-block data access, shortening backup restores, media streaming, and dataset loading times for business-critical workflows.
3. With exceptionally high random read capability, the drive sustains responsive performance for OLTP databases, VDI boot storms, and heavily consolidated mixed-VM workloads.
4. The high-endurance rating supports write-intensive enterprise use cases such as logging, caching, and transactional systems, enabling predictable lifespan under continuous daily rewrites.
5. Built on Samsung V-NAND 3D TLC and paired with low typical latency, it balances enterprise-class capacity efficiency with consistently fast response times for latency-sensitive applications.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB In this enterprise SSD family, the 3.2 TB model sits at the sweet spot of the stack. Compared with the 1.6 TB version, it gives much better headroom for VM growth, log expansion, and application datasets without changing the expected enterprise read/write or IOPS profile. Compared with the 6.4 TB option, it delivers a more efficient balance of acquisition cost, usable capacity, and steady performance consistency. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and mixed-workload storage for around 40 to 60 virtual machines.

FAQ