Samsung MZ-QLB1T9N 1.92 TB 983 DCT PCIe 3.0 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	983 DCT
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe 3.0 x4
Total Interface Bandwidth	8 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit TLC
Drive Writes Per Day	1.3
Total Bytes Written	2733 TBW

Performance

Sequential Read	3000 MB/s
Sequential Write	1900 MB/s
Random Read IOPS	540000
Random Write IOPS	50000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ7KM480HMHQ

Engineer's Note

Compared with the previous-generation MZ7KM480HMHQ, the Samsung 983 DCT MZ-QLB1T9N makes a clear generational leap to PCIe 3.0 x4 NVMe, increasing usable capacity to 1.92 TB and delivering up to 3000/1900 MB/s with 540,000 random-read IOPS for substantially higher throughput and lower latency in server deployments. Its unique value in this class is the combination of Samsung V-NAND 3-bit TLC efficiency with enterprise-grade endurance—1.3 DWPD and 2733 TBW—making it a strong fit for read-centric virtualization, content delivery, and scale-out cloud workloads that need better performance density than older SATA enterprise SSDs.

Endurance & Reliability

With an endurance rating of 2,733 TBW and 1.3 DWPD, the MZ-QLB1T9N is designed to handle sustained daily write activity across its warranty period and is more than sufficient for typical enterprise system-boot, logging, caching, and mixed-read workloads. In practical terms, for normal OS and application drive usage, this level of endurance supports many years of stable operation with ample write headroom, giving procurement teams confidence in long-term deployment. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protect metadata integrity during unexpected power interruptions, reducing the risk of corruption and unclean shutdown issues. Its UBER of 1.0E-17, together with a 2 million hour MTBF, reflects a very low uncorrectable bit error rate and strong overall dependability for business-critical environments where data integrity and uptime matter.

Technical Specs & Insights

1. The PCIe 3.0 x4 interface provides enough host bandwidth to keep enterprise application stacks responsive, reducing storage bottlenecks in virtualization and scale-out server deployments.
2. The strong sequential read performance accelerates large-file access, helping analytics platforms, backup validation, and media-heavy workloads complete data scans faster.
3. The high random read capability is ideal for databases and VDI environments, where dense small-block access must stay fast even under heavy user concurrency.
4. With a typical latency of just 85 µs, the drive supports consistently snappy transaction handling, improving QoS for latency-sensitive enterprise applications.
5. Samsung V-NAND 3-bit TLC combined with a 1.3 DWPD endurance rating balances flash efficiency with write durability, making it a cost-effective choice for read-centric enterprise workloads that still require dependable daily rewrite headroom.

Capacity Sweet

Lower capacity reference: 960 GB Higher capacity reference: 3.84 TB Capacity positioning analysis: Within this SSD family, the 1.92 TB model sits at the sweet spot. Compared with the 960 GB option, it gives much better headroom for OS images, databases, logs, and future growth, reducing the risk of early capacity pressure while keeping the same enterprise-class read/write and random IOPS profile. Compared with the 3.84 TB version, it delivers a more attractive cost-to-performance balance, avoiding overprovisioned spend for mid-scale deployments. It is especially well suited for a 2-node virtualization cluster hosting about 40 to 60 mixed business workloads.

FAQ