Samsung MZ-QLB7T60 7.68 TB PM983 PCIe Gen3 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	7.68 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	1.3
Total Bytes Written	11000 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2200 MB/s
Random Read IOPS	540000
Random Write IOPS	50000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZQLB7T6HMLA

Engineer's Note

Compared with the earlier MZQLB7T6HMLA, the MZ-QLB7T60 PM983 delivers a clear generational step forward in enterprise-readiness by combining 7.68 TB of Samsung V-NAND 3D TLC with 11,000 TBW endurance, 1.3 DWPD, and up to 3,200/2,200 MB/s throughput. Its 540,000/50,000 IOPS profile gives it a stronger fit than prior-generation Gen3 drives for high-density virtualization, scale-out cloud storage, and read-centric database tiers that need predictable performance without moving to a higher-cost Gen4 platform.

Endurance & Reliability

With an endurance rating of 11,000 TBW and 1.3 DWPD, the MZ-QLB7T60 is built to handle sustained write activity in typical enterprise and commercial workloads over its service life. In practical terms, this level of endurance is more than sufficient for long-term use as a system or application drive, giving buyers confidence in stable operation for many years under normal deployment conditions. The drive also includes enterprise-grade reliability protections such as Power Loss Protection (PLP), which helps preserve in-flight data and metadata if power is suddenly interrupted. Its UBER of 1.0E-17 indicates an extremely low unrecoverable bit error rate, supporting high data integrity and dependable performance in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface provides a high-bandwidth, low-overhead data path that keeps enterprise servers, virtualization hosts, and storage nodes fed with consistent flash performance.
2. With sequential read throughput up to 3200 MB/s, the drive accelerates large-file access, reducing backup restore, database scan, and analytics load times.
3. Delivering 540,000 K IOPS in random reads, it is well suited for transaction-heavy workloads such as OLTP databases, VDI boot storms, and high-concurrency cloud applications.
4. Rated for 1.3 DWPD and built on Samsung V-NAND 3D TLC, the drive balances write endurance with cost efficiency, making it a strong fit for mixed-use enterprise deployments that demand reliable service life.
5. A typical latency of 85 µs helps minimize response-time bottlenecks, improving application consistency for latency-sensitive workloads such as real-time databases and virtualized infrastructure.

Capacity Sweet

Lower capacity reference: 3.84 TB Higher capacity reference: 15.36 TB At 7.68 TB, this SSD sits in the sweet spot of the series. Compared with 3.84 TB, it gives meaningfully better headroom for data growth, denser consolidation, and longer refresh cycles without changing the expected enterprise performance profile. Compared with 15.36 TB, it keeps acquisition cost, rebuild exposure, and per-node budget under tighter control while still delivering strong usable capacity. In practice, 7.68 TB is an excellent fit for a mid-size virtualization cluster, such as hosting boot and application volumes for about 40 to 60 mixed-workload virtual machines.

FAQ