Samsung MZ-V7S1T0 1TB 970 EVO Plus NVMe PCIe Gen3 x4 M.2 (2280) Client Solid State Drive

General

Brand	Samsung
Model	970 EVO Plus
Capacity	1TB
Usage Class	Client

Interface

Host Interface	NVMe PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	M.2 (2280)

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit MLC
Drive Writes Per Day	0.3
Total Bytes Written	600 TBW

Performance

Sequential Read	3500 MB/s
Sequential Write	3300 MB/s
Random Read IOPS	600000
Random Write IOPS	550000
Average Latency	80 μs

Reliability

Mean Time Between Failures	1.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	No

Part Number

MPN	MZ-V7E1T0

Engineer's Note

The Samsung 970 EVO Plus 1TB (MZ-V7S1T0) delivers a clear generational step over the MZ-V7E1T0, increasing sequential write performance from 2,500 to 3,300 MB/s (+32%) and random write from 500,000 to 550,000 IOPS (+10%) while maintaining the same 600 TBW endurance. For PCIe Gen3 x4 platforms that need near-flagship responsiveness without moving to Gen4, it is the stronger choice for OS, application, and content-creation scratch workloads thanks to its 3,500 MB/s reads, 600K IOPS random reads, and Samsung V-NAND 3-bit MLC efficiency.

Endurance & Reliability

With an endurance rating of 600 TBW, this 1TB SSD can sustain about 164 GB of host writes per day for 10 years, or roughly 328 GB per day for 5 years, which is well above the write volume of most office PCs and system-drive use cases. In practical terms, for OS, applications, documents, and routine business workloads, this level of endurance provides a comfortable margin for long-term deployment. In reliability terms, the UBER specification of 1.0E-15 means the drive is designed for a very low rate of uncorrectable read errors, which is in line with mainstream client SSD expectations and suitable for normal enterprise endpoint and office environments. This model does not include power-loss protection (PLP), so while it is dependable for standard desktops and notebooks, it is best used in systems with stable power or UPS support rather than in write-critical environments where sudden power interruption protection is required.

Technical Specs & Insights

1. The NVMe over PCIe Gen3 x4 architecture, paired with top-tier sequential bandwidth, accelerates backup windows, VM boot storms, and large dataset streaming in latency-sensitive enterprise environments.
2. Its strong random-read capability enables dense virtualization, metadata-heavy databases, and high-concurrency application tiers to serve far more transactions without becoming storage-bound.
3. The endurance profile is best suited to read-centric enterprise workloads such as content distribution, analytics repositories, and boot or cache layers where write pressure is moderate but uptime still matters.
4. Samsung V-NAND 3-bit MLC delivers a practical balance of flash density, power efficiency, and cost, helping organizations scale capacity economically for mainstream data-center deployment.
5. The very low typical latency improves application responsiveness and tail-latency behavior, which is critical for OLTP systems, virtual desktops, and real-time service delivery.

Capacity Sweet

Lower capacity reference: 500GB Higher capacity reference: 2TB In the MZ-V7S series, the 1TB model is the practical sweet spot. Compared with the 500GB version, it gives much better headroom for OS images, application stacks, logs, and future growth, reducing early capacity pressure in sustained enterprise use. Compared with the 2TB option, it delivers nearly the same class of sequential throughput and random IOPS while keeping acquisition cost and fleet-wide budget under tighter control. This makes 1TB especially well suited for mid-sized virtualization clusters, such as hosting boot and application volumes for around 40 to 60 business service instances.

FAQ