Samsung MZ-V9S1T0B/AM 1 TB 990 EVO Plus PCIe 4.0 x4 / 5.0 x2 M.2 (2280) Client / Consumer Solid State Drive

General

Brand	Samsung
Model	990 EVO Plus
Capacity	1 TB
Usage Class	Client / Consumer

Interface

Host Interface	PCIe 4.0 x4 / 5.0 x2
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	M.2 (2280)

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit TLC
Drive Writes Per Day	0.33
Total Bytes Written	600 TBW

Performance

Sequential Read	7150 MB/s
Sequential Write	6300 MB/s
Random Read IOPS	850000
Random Write IOPS	135000
Average Latency	60 μs

Reliability

Mean Time Between Failures	1.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	No

Part Number

MPN	MZ7KM480HAHP

Engineer's Note

Compared with the legacy MZ7KM480HAHP, the MZ-V9S1T0B/AM 990 EVO Plus delivers a clear generational jump to NVMe performance, reaching up to 7,150/6,300 MB/s sequential throughput and 850,000 random-read IOPS for substantially faster OS, application, and content-creation workloads. Its dual-mode PCIe 4.0 x4 / 5.0 x2 interface, 1 TB Samsung V-NAND 3-bit TLC design, and 600 TBW endurance give it stronger platform flexibility, much higher bandwidth density, and better efficiency than the prior generation.

Endurance & Reliability

With an endurance rating of 600 TBW, this 1 TB SSD can sustain about 164 GB of writes per day for 10 years, which is well above the needs of a typical OS, office, and general business workstation workload. In practical terms, when used as a system or application drive rather than a heavy write-intensive database device, it provides comfortable long-term endurance with substantial write headroom. Its specified UBER of 1.0E-15 means the risk of an unrecoverable bit error is very low and in line with dependable modern SSD operation for mainstream business use. This model does not include power-loss protection (PLP), so while it is suitable for client and standard system environments, deployments handling in-flight critical writes should use stable power conditions or UPS protection to minimize interruption risk.

Technical Specs & Insights

1. The PCIe 4.0 x4 / 5.0 x2 host interface provides enough bandwidth headroom to keep modern servers and edge platforms fed with data, reducing storage bottlenecks during virtualization, analytics, and high-concurrency application workloads.
2. Its top-end sequential read speed accelerates large-block data movement, helping databases, backup repositories, and AI pipelines shorten dataset loading, restore, and scan times.
3. The strong random read capability is well suited to latency-sensitive mixed workloads such as OLTP, VDI, metadata lookup, and heavily indexed applications where fast access to small files matters more than raw capacity.
4. With a modest write endurance rating, this drive is a better fit for read-intensive enterprise deployments like boot volumes, content distribution, reference datasets, and query-heavy platforms than for sustained write-heavy logging or caching tiers.
5. Samsung V-NAND 3-bit TLC combined with low typical latency delivers a practical balance of density, cost efficiency, and responsive service times for scale-out infrastructure that needs predictable performance without moving to more expensive media.

Capacity Sweet

Lower capacity reference: 500 GB Higher capacity reference: 2 TB The 1 TB MZ-V9S1T0B/AM sits at the sweet spot of the series. Compared with the 500 GB model, it offers much better headroom for OS images, application stacks, logs, and growth, reducing the risk of early capacity pressure. Compared with the 2 TB version, it preserves nearly the same everyday sequential and random performance while delivering a more efficient cost-to-capacity balance. This makes 1 TB ideal for mid-scale deployments, such as boot and application storage for a 12 to 20 node virtualization or container cluster.

FAQ