Samsung MZ-V9S4T0B/AM 4 TB 990 EVO Plus PCIe 4.0 x4 / PCIe 5.0 x2 M.2 2280 Client / Consumer Solid State Drive

General

Brand	Samsung
Model	990 EVO Plus
Capacity	4 TB
Usage Class	Client / Consumer

Interface

Host Interface	PCIe 4.0 x4 / PCIe 5.0 x2
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	M.2 2280

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit TLC
Drive Writes Per Day	0.33
Total Bytes Written	2400 TBW

Performance

Sequential Read	7250 MB/s
Sequential Write	6300 MB/s
Random Read IOPS	1050000
Random Write IOPS	140000
Average Latency	50 μs

Reliability

Mean Time Between Failures	1.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	No

Part Number

MPN	MZ-V9S2T0B/AM

Engineer's Note

The MZ-V9S4T0B/AM 990 EVO Plus is the stronger choice over the earlier MZ-V9S2T0B/AM, doubling usable capacity to 4 TB and expanding endurance headroom to 2400 TBW for denser workstation and prosumer content libraries. With up to 7250/6300 MB/s sequential performance, 1,050,000 random-read IOPS, and dual-mode PCIe 4.0 x4 / PCIe 5.0 x2 compatibility, it delivers a more scalable and platform-flexible upgrade than its predecessor.

Endurance & Reliability

With an endurance rating of 2400 TBW, this 4 TB SSD is designed to handle about 1.3 TB of host writes per day over five years, which is far beyond the write volume of most office PCs, workstations, and OS boot drives. In typical business client workloads, this means the drive offers ample write headroom for long-term daily use without endurance being a practical concern. Its UBER rating of 1.0E-15 indicates a very low unrecoverable read error rate, supporting dependable data reads in normal enterprise and professional usage, while the 1.5 million-hour MTBF further reflects solid long-term component reliability. This model does not include power-loss protection (PLP), so it is best deployed in systems with stable power or UPS coverage rather than write-critical environments where sudden power interruption must be specifically safeguarded.

Technical Specs & Insights

1. The PCIe 4.0 x4 / PCIe 5.0 x2 interface gives this drive broad server compatibility while providing enough host bandwidth to prevent the storage link from becoming a bottleneck in dense compute nodes.
2. With sequential reads up to 7250 MB/s, the SSD accelerates large-block data movement such as database snapshots, VM image loading, and analytics dataset staging.
3. Delivering up to 1,050,000K random read IOPS, it is well suited for highly concurrent workloads where fast access to massive numbers of small files or records directly improves application responsiveness.
4. A 0.33 DWPD endurance rating makes it a strong fit for read-centric enterprise deployments, balancing fleet-scale capacity and cost efficiency for content repositories, boot tiers, and inference storage.
5. Samsung V-NAND 3-bit TLC paired with 50 µs typical latency provides a practical mix of flash density and low access delay, helping reduce tail-latency impact in latency-sensitive services without paying for higher-endurance media.

Capacity Sweet

Lower-capacity reference: 2 TB Higher-capacity reference: N/A — 4 TB is the highest capacity currently offered in the MZ-V9S series. At 4 TB, the MZ-V9S4T0B/AM sits in the sweet spot of the series. Compared with the 2 TB model, it gives meaningfully more headroom for OS images, active project data, staging space, and sustained growth, reducing the need for early storage expansion. Because there is no larger same-series SKU, 4 TB is also the practical top-end choice before moving into a different product tier with a higher cost profile. It is best suited for mid-scale deployments, such as a virtualization node hosting roughly 40 to 60 light-duty virtual desktops or application instances.

FAQ