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| Brand | Samsung |
|---|---|
| Model | 990 EVO Plus Series |
| Capacity | 4TB |
| Usage Class | Consumer / Client |
| Host Interface | PCIe Gen 4.0 x4 / Gen 5.0 x2, NVMe 2.0 |
|---|---|
| Total Interface Bandwidth | 16 Gb/s |
| Form Factor | M.2 22 x 80mm |
|---|
| NAND Flash | Samsung V-NAND TLC |
|---|---|
| Drive Writes Per Day | 0.3 |
| Total Bytes Written | 2400 TBW |
| Sequential Read | 7250 MB/s |
|---|---|
| Sequential Write | 6300 MB/s |
| Random Read IOPS | 1050000 |
| Random Write IOPS | 1400000 |
| Average Latency | 50 μs |
| Mean Time Between Failures | 1.5 Million Hours |
|---|---|
| Uncorrectable Bit Error Rate | 1.0×10⁻¹⁷ |
| Power Loss Protection | No |
| MPN | MZ-V9E2T0BW |
|---|
The Samsung 990 EVO Plus 4TB (MZ-V9S4T0BW) stands out by combining 7,250/6,300 MB/s sequential performance with up to 1,050K/1,400K random IOPS and a flexible PCIe Gen4 x4 / Gen5 x2 NVMe 2.0 interface, making it a strong fit for high-density creator workstations and gaming libraries that need both throughput and broad platform compatibility. Compared with the previous-generation MZ-V9E2T0BW, this 4TB model doubles usable capacity while raising total endurance to 2,400 TBW, delivering a clear generational advantage in drive consolidation and long-term write headroom.
With an endurance rating of 2,400 TBW and 0.3 DWPD, the MZ-V9S4T0BW can sustain about 1.2 TB of host writes per day over its warranty period, which is more than sufficient for typical client, workstation, and read-heavy business applications. In practical terms, for common OS, office, and application-drive workloads that usually write far less each day, this level of endurance supports many years of stable use and makes it a dependable choice as a primary system drive. In reliability terms, the specified UBER of 1.0E-15 means the drive is designed for a very low unrecoverable bit error rate, helping ensure strong data integrity during normal operation and making it suitable for professional environments with regular read/write activity. This model does not include power-loss protection, so while it remains reliable for standard deployments, it is best paired with stable system power or UPS-backed environments where unexpected power interruption risk is controlled.
1. The PCIe 4.0 x4 / 5.0 x2 interface with NVMe 2.0 provides broad server-platform compatibility and enough bandwidth to keep virtualized databases, analytics nodes, and edge AI pipelines consistently fed without bus-side bottlenecks.
2. Its sequential read performance enables very large datasets, VM images, and training checkpoints to be streamed fast enough to noticeably shorten system boot, recovery, and content-ingest windows in enterprise environments.
3. The random read capability is tuned for heavily indexed and parallel workloads, helping high-concurrency OLTP, metadata services, and VDI fleets sustain responsive access under deep queue pressure.
4. Built on Samsung V-NAND TLC with a light-write endurance profile, it is best aligned with read-centric enterprise deployments such as scale-out caching, content distribution, boot storage, and data lakes rather than constant write-heavy logging tiers.
5. The typical latency is low enough to reduce storage wait time at the microsecond level, improving tail-response consistency for latency-sensitive applications like real-time query serving and interactive cloud services.
Lower-capacity reference: 2TB Higher-capacity reference: 8TB Capacity positioning analysis: At 4TB, the MZ-V9S4T0BW sits at the sweet spot of the series. Compared with the 2TB model, it provides much better space elasticity for VM growth, snapshots, logs, and working data, lowering the risk of early capacity bottlenecks while keeping broadly similar sequential throughput and random IOPS. Compared with an 8TB option, it usually offers the best balance of acquisition cost, usable capacity, and performance consistency. It is especially well suited for a mid-size virtualization host supporting about 40 to 60 mixed business application instances.
Q: Is MZ-V9S4T0BW suitable for a write-heavy database server?
A: Not ideally. With 0.3 DWPD, TLC NAND, and no power loss protection, this SSD is better suited for read-intensive or light mixed workloads than sustained write-heavy database server use.
Q: How many full drive writes per day can it actually endure over its warranty period?
A: Based on 2400 TBW and 4TB capacity, it supports about 600 total full drive writes. Assuming a 5-year warranty, that equals roughly 0.33 full drive writes per day.
Q: Does it include power loss protection (PLP) and why is that critical?
A: No, it does not include PLP. That matters because PLP helps protect in-flight writes and mapping data during sudden power loss, reducing corruption risk in databases and RAID environments.
Q: What RAID level is recommended for this SSD?
A: For server use, RAID 10 is generally the best recommendation, especially for database workloads. It provides strong performance and redundancy while avoiding the extra write penalty of parity-based RAID levels.