Samsung MZ-WJJ1T60 1.6 TB SZ1735 PCIe Gen4 x4 2.5" Ultra-Low Latency / High Endurance Solid State Drive

General

Brand	Samsung
Model	SZ1735
Capacity	1.6 TB
Usage Class	Ultra-Low Latency / High Endurance

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung Z-NAND SLC
Drive Writes Per Day	30
Total Bytes Written	87600 TBW

Performance

Sequential Read	5700 MB/s
Sequential Write	3600 MB/s
Random Read IOPS	1000000
Random Write IOPS	250000
Average Latency	30 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWJJ1T6HMGG-000M3

Engineer's Note

Compared with the previous-generation MZWJJ1T6HMGG-000M3, the MZ-WJJ1T60 (SZ1735) moves to a PCIe Gen4 x4 interface and combines Samsung Z-NAND SLC with up to 5,700/3,600 MB/s sequential throughput and 1,000,000/250,000 IOPS for a clear step up in low-latency performance. Its 30 DWPD endurance and 87,600 TBW rating make this 1.6 TB drive a stronger choice than mainstream enterprise SSDs for write-intensive trading, caching, and real-time analytics workloads where sustained responsiveness and extreme durability matter more than raw capacity.

Endurance & Reliability

With an endurance rating of 87,600 TBW and 30 DWPD, the MZ-WJJ1T60 is designed for extremely write-intensive enterprise workloads, allowing the full drive capacity to be written 30 times per day throughout its rated life. In typical use as an OS, boot, or general application drive, this level of endurance provides very large headroom and can support long-term operation with confidence, far beyond the write demand of most conventional deployments. For enterprise reliability, the drive includes power loss protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is interrupted unexpectedly. Its ultra-low UBER of 1.0E-17, together with a 2 million hour MTBF, indicates a very low likelihood of uncorrectable bit errors and supports dependable data integrity in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 host interface, paired with top-tier sequential bandwidth, accelerates large dataset ingestion, checkpoint loading, and VM boot storms in performance-sensitive servers.
2. The exceptional random-read capability enables ultra-fast index lookups and metadata access, making it ideal for high-concurrency OLTP databases, caching tiers, and real-time analytics.
3. A 30 DWPD endurance rating gives enterprises the confidence to run intensive write-heavy workloads—such as logging, journaling, and high-frequency trading storage—without premature wear concerns.
4. Samsung Z-NAND SLC is engineered for deterministic low-latency behavior, helping mission-critical applications maintain consistent QoS under sustained pressure.
5. With a typical latency of just 30 µs, the drive minimizes storage wait time, directly improving application responsiveness in latency-sensitive platforms like in-memory databases and AI serving pipelines.

Capacity Sweet

Lower capacity reference: 800 GB Higher capacity reference: 3.2 TB At 1.6 TB, this model sits in the sweet spot of the family. Compared with the 800 GB option, it gives much better headroom for OS images, logs, hot datasets, and VM growth, reducing the risk of early capacity pressure. Compared with the 3.2 TB model, it usually delivers the best balance between acquisition cost, usable endurance, and enterprise-grade performance consistency. This makes 1.6 TB especially well suited for mid-scale virtualization clusters, database read caches, or compact all-flash nodes serving around 40 to 60 mixed-business workloads.

FAQ