Samsung MZ-WL615TC 15.36 TB PM9D3A PCIe 5.0 x4 2.5" Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM9D3A
Capacity	15.36 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe 5.0 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung V-NAND 3-bit TLC
Drive Writes Per Day	1
Total Bytes Written	28032 TBW

Performance

Sequential Read	12000 MB/s
Sequential Write	6800 MB/s
Random Read IOPS	2000000
Random Write IOPS	350000
Average Latency	65 μs

Reliability

Mean Time Between Failures	2.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-76E2T0E

Engineer's Note

Compared with the previous-generation MZ-76E2T0E, the PM9D3A MZ-WL615TC makes a clear generational jump to PCIe 5.0 x4, delivering up to 12,000/6,800 MB/s sequential read/write and 2,000,000 random-read IOPS for dramatically higher throughput and much lower storage bottlenecks in modern servers. With 15.36 TB of Samsung V-NAND 3-bit TLC and 1 DWPD endurance rated at 28,032 TBW, it is especially well suited for dense virtualization, scale-out cloud storage, and analytics nodes that need far more performance per drive while maintaining enterprise-class write endurance.

Endurance & Reliability

With an endurance rating of 28,032 TBW and 1 DWPD, the MZ-WL615TC is built to sustain full-capacity writes every day throughout its warranted service life, making it well suited for steady enterprise workloads. In typical real-world use, this level of endurance means it can serve as a highly dependable OS, boot, or read/write-intensive server drive with substantial long-term write headroom and no concern about normal daily usage. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. Its ultra-low UBER of 1.0E-17, together with a 2.5 million-hour MTBF, indicates very strong data integrity and operational reliability, giving procurement teams confidence for business-critical deployments.

Technical Specs & Insights

1. The PCIe 5.0 x4 interface, paired with top-tier sequential read performance, enables ultra-fast dataset staging and significantly shortens boot, restore, and large-model loading windows in GPU and database servers.
2. Its exceptional random read capability sustains massive parallel access with minimal queue buildup, making it ideal for high-concurrency OLTP, virtualization, and AI inference workloads.
3. A 1 DWPD endurance profile gives enterprises the confidence to run daily full-drive rewrites throughout the warranty period, balancing dependable write life with mainstream data center TCO.
4. Samsung V-NAND 3-bit TLC provides an optimized mix of capacity, efficiency, and predictable endurance, fitting cloud-scale deployments that need strong performance without moving to higher-cost media.
5. The low typical latency helps applications respond faster at the storage layer, reducing tail-delay sensitivity in real-time analytics, metadata-heavy systems, and latency-critical transaction paths.

Capacity Sweet

Lower capacity reference: 7.68 TB Higher capacity reference: 30.72 TB In this series, the 15.36 TB model sits at the practical sweet spot. Compared with the 7.68 TB version, it gives much more headroom for data growth, denser consolidation, and longer refresh cycles without changing the expected enterprise-class sequential and random performance profile. Compared with the 30.72 TB option, it usually delivers the best balance between acquisition cost, usable capacity, power efficiency, and risk concentration per drive. It is especially well suited for mid-scale virtualization clusters, mixed database nodes, or compact all-flash arrays serving roughly 150-250 general-purpose VDI users.

FAQ