Samsung MZ-WLJ1T90 1.92 TB PM1733 PCIe Gen4 x4 U.2 Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	U.2

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	6400 MB/s
Sequential Write	2100 MB/s
Random Read IOPS	900000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLJ1T9HBJR

Engineer's Note

Compared with the previous MZWLJ1T9HBJR generation, the PM1733 MZ-WLJ1T90 upgrades to a PCIe Gen4 x4 interface and Samsung 5th-Gen 9x-Layer V-NAND, delivering up to 6,400 MB/s sequential read and 900,000 random read IOPS for noticeably higher throughput and lower-latency data access. Its unique value in the 1.92 TB class is the combination of Gen4-class read performance with enterprise-ready 1 DWPD endurance and 3,504 TBW, making it a strong fit for read-intensive virtualization, analytics, and scale-out database tiers that need faster service times than prior-generation drives.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, the MZ-WLJ1T90 is designed to support writing its full capacity once per day throughout its rated service life, which is more than sufficient for typical enterprise boot, system, and mixed read/write workloads. In practical terms, under normal server or storage usage, this level of endurance provides long-term confidence and can comfortably sustain many years of operation without endurance becoming a concern. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and prevent metadata corruption if power is interrupted unexpectedly. Its UBER rating of 1.0E-17, together with a 2 million-hour MTBF, indicates a very low risk of uncorrectable bit errors and supports dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 host interface, paired with its high sequential bandwidth, accelerates database warm-up, VM boot storms, and large-model loading in performance-sensitive enterprise servers.
2. Strong sequential read performance helps analytics clusters and backup appliances ingest large datasets faster, reducing wait time for scan-heavy workloads.
3. Extremely high random read capability keeps latency under pressure in virtualized environments, making it well suited for OLTP databases, metadata services, and high-concurrency cloud applications.
4. A one-drive-write-per-day endurance profile provides a balanced fit for read-centric enterprise deployments that still require predictable write resilience over the full service life of the drive.
5. Samsung’s advanced 3D TLC V-NAND and low typical read latency enable consistent QoS, better power-and-density efficiency, and responsive performance for mixed enterprise workloads.

Capacity Sweet

Lower capacity reference: 960 GB Higher capacity reference: 3.84 TB At 1.92 TB, this model sits at the sweet spot of the family. Compared with the 960 GB option, it gives much better headroom for OS images, application growth, logs, and hot data, reducing early capacity pressure in production. Compared with the 3.84 TB version, it keeps acquisition cost and replacement budget under tighter control while delivering essentially the same enterprise-class read/write and random IOPS profile. It is best suited for mid-scale deployments, such as hosting around 40-60 mixed virtual machines or a compact business-critical database cluster.

FAQ