Samsung MZ-WLJ3T80 3.84 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLJ3T8HBLS-00007

Engineer's Note

Compared with the earlier MZWLJ3T8HBLS-00007 revision, the MZ-WLJ3T80 refresh sharpens the PM1733’s enterprise profile with Samsung 5th-Gen V-NAND, PCIe Gen4 x4 bandwidth, up to 7,000/3,800 MB/s sequential performance, and 1,450,000/115,000 IOPS at 3.84 TB. Its distinctive value in this class is the combination of very high random-read density with a solid 7,008 TBW endurance rating, making it a stronger fit for latency-sensitive virtualization, scale-out databases, and mixed read/write cloud infrastructure than prior PM1733 iterations.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, the MZ-WLJ3T80 is designed to handle writing its full capacity every day across its rated service life, which is more than sufficient for typical enterprise system-boot, virtualization, and read-intensive application workloads. In practical terms, for common OS and application drive use, this level of endurance provides long-term operational headroom and can comfortably support many years of stable deployment without write-wear concerns. For enterprise reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving recovery confidence. Its ultra-low UBER of 1.0E-17, together with a 2 million hour MTBF, reflects enterprise-grade data integrity and dependability, helping procurement teams deploy it with confidence in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with 7000 MB/s sequential read performance, accelerates large dataset streaming, VM boot storms, and analytics job startup in bandwidth-hungry enterprise servers.
2. With 1,450,000 K IOPS random read capability, this SSD sustains extremely high transaction concurrency for latency-sensitive databases, virtualized workloads, and real-time caching tiers.
3. A 1 DWPD endurance rating provides predictable day-after-day write sustainability, making it well suited for mixed-use enterprise deployments that need steady performance without overprovisioning for durability.
4. Samsung V-NAND 5th-Gen 9x-Layer 3D TLC balances density, power efficiency, and flash reliability, helping data centers scale capacity economically while maintaining enterprise-grade consistency.
5. A typical latency of 95 µs helps reduce storage response bottlenecks, improving application responsiveness in OLTP systems, metadata-heavy workloads, and distributed infrastructure.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB At 3.84 TB, the MZ-WLJ3T80 sits in the sweet spot of the series. Compared with the 1.92 TB model, it offers much better headroom for data growth, denser VM placement, and longer refresh cycles without changing the platform or giving up enterprise-class read/write and IOPS behavior. Compared with the 7.68 TB version, it delivers a more balanced acquisition cost, easier budget scaling, and similar mainstream performance characteristics. It is best suited for mid-scale virtualization clusters, database nodes, and high-density boot or cache tiers for roughly 40-60 mixed-workload servers.

FAQ