Samsung MZ-WLL1T6A 1.6 TB PM1725a PCIe Gen3 x4 2.5 inch Write Intensive Solid State Drive

General

Brand	Samsung
Model	PM1725a
Capacity	1.6 TB
Usage Class	Write Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	5
Total Bytes Written	14600 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	1900 MB/s
Random Read IOPS	750000
Random Write IOPS	140000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLW1T6HMHQ-00003

Engineer's Note

Compared with the previous-generation MZWLW1T6HMHQ-00003, the Samsung PM1725a (MZ-WLL1T6A) delivers a clear generational step forward with Samsung V-NAND 3D TLC, PCIe Gen3 x4 connectivity, and up to 3,300/1,900 MB/s sequential throughput for faster response in mixed enterprise workloads. Its 750,000/140,000 IOPS profile together with 5 DWPD and 14,600 TBW makes this 1.6 TB drive a stronger choice for write-intensive database, virtualization, and high-transaction OLTP environments where both endurance headroom and predictable latency matter.

Endurance & Reliability

With an endurance rating of 14,600 TBW and 5 DWPD, the MZ-WLL1T6A is built for sustained write-intensive enterprise workloads, allowing the full drive capacity to be overwritten five times per day within its rated service life. In typical real-world use, this level of endurance is far beyond system-boot or general server storage requirements, making it a highly safe choice for long-term deployment with substantial write headroom. For enterprise reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and maintain metadata integrity if power is interrupted unexpectedly. Its UBER of 1.0E-17, together with a 2 million hour MTBF, indicates an enterprise-class design focused on extremely low uncorrectable read error rates and dependable continuous operation.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface, paired with strong sequential bandwidth, accelerates large-block data movement so database snapshots, backup restores, and analytics jobs complete noticeably faster.
2. With extremely high random-read capability, this drive sustains dense VM farms, metadata-heavy storage, and read-intensive OLTP workloads without becoming a bottleneck.
3. A 5 DWPD endurance rating makes it well suited for write-heavy enterprise environments such as logging, caching, and high-churn transactional platforms that demand predictable lifespan.
4. Samsung V-NAND 3D TLC provides a balanced mix of capacity, power efficiency, and enterprise-grade consistency, helping lower total cost of ownership without sacrificing operational stability.
5. Typical latency of 90 µs enables faster application response under load, which is especially valuable for latency-sensitive services like real-time databases and virtualized infrastructure.

Capacity Sweet

Lower capacity reference: 800 GB Higher capacity reference: 3.2 TB In this series, the 1.6 TB model sits at a practical sweet spot. Compared with the 800 GB version, it gives meaningfully better headroom for data growth, over-provisioning, and mixed workload consolidation, reducing the risk of early capacity pressure. Compared with the 3.2 TB option, it usually delivers the best balance of acquisition cost, usable capacity, and enterprise-grade performance consistency, since sequential and random IOPS remain broadly similar across the range. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for about 40 to 60 business workloads.

FAQ