Samsung MZ-WLL1T6B 1.6 TB PM1725b PCIe Gen3 x4 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1725b
Capacity	1.6 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	5
Total Bytes Written	14600 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	2600 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLL1T6HAJQ-00007

Engineer's Note

Compared with its predecessor MZWLL1T6HAJQ-00007, the Samsung PM1725b MZ-WLL1T6B lifts the performance envelope for transaction-heavy enterprise workloads with up to 3,300/2,600 MB/s sequential throughput and 800,000/160,000 IOPS, while maintaining a robust 5 DWPD and 14,600 TBW at 1.6 TB. Its unique value is pairing Samsung V-NAND 3D TLC efficiency with unusually high write endurance for a TLC NVMe drive, making it a stronger choice than typical same-class PCIe Gen3 x4 SSDs for OLTP databases, metadata-intensive virtualization, and mixed read/write caching tiers.

Endurance & Reliability

With an endurance rating of 14,600 TBW and 5 DWPD, the MZ-WLL1T6B is built for sustained enterprise write workloads and can comfortably handle frequent daily data updates over its service life. In typical use, this level of endurance means it can serve reliably as a high-write system or application drive for many years without endurance becoming a practical concern. Its enterprise reliability is further strengthened by power-loss protection, which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. An UBER of 1.0E-17 and an MTBF of 2 million hours indicate a very low probability of uncorrectable errors and strong long-term operational stability, giving procurement teams added confidence for business-critical deployments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface gives this drive enough host-side bandwidth to keep enterprise application stacks fed consistently, making it a strong fit for virtualization nodes, database servers, and scale-out storage platforms.
2. With sequential read performance of 3300 MB/s, the SSD accelerates large-block data movement such as analytics scans, backup restores, and high-speed dataset loading into production environments.
3. Its 800,000 K IOPS random-read capability, paired with a typical latency of 90 µs, translates into faster response under highly concurrent small-block workloads like OLTP databases, metadata services, and VDI boot storms.
4. A 5 DWPD endurance rating means the drive can sustain heavy full-drive rewrites every day over its service life, which is critical for write-intensive enterprise workloads that demand predictable longevity.
5. Samsung V-NAND 3D TLC combines enterprise-capable density with solid performance consistency, helping organizations scale capacity efficiently without giving up the reliability expected in always-on data center use.

Capacity Sweet

Lower capacity reference: 800 GB Higher capacity reference: 3.2 TB At 1.6 TB, the MZ-WLL1T6B sits in the sweet spot of the series. Compared with the 800 GB model, it gives much better headroom for growth, reducing early capacity pressure and lowering the risk of overprovisioning too tightly in mixed enterprise workloads. Compared with the 3.2 TB version, it delivers nearly the same class of sequential throughput and random IOPS while keeping acquisition cost and fleet standardization more manageable. It is especially well suited for mid-scale virtualization clusters, such as hosting operating system and application volumes for about 40 to 60 business workloads.

FAQ