Samsung MZ-WLL3T2B 3.2 TB PM1725B PCIe Gen3 x4 U.2 (2.5") Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1725B
Capacity	3.2 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	5
Total Bytes Written	29200 TBW

Performance

Sequential Read	3300 MB/s
Sequential Write	2900 MB/s
Random Read IOPS	800000
Random Write IOPS	160000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-77E4T0

Engineer's Note

The Samsung PM1725B (MZ-WLL3T2B) stands out for mission-critical mixed-read/write workloads by combining 3.2 TB of 5 DWPD endurance with 29,200 TBW, up to 3,300/2,900 MB/s sequential performance, and 800K/160K IOPS from Samsung 5th-Gen V-NAND. Compared with the previous-generation MZ-77E4T0, it delivers a clear generational step-up from SATA-class storage to PCIe Gen3 x4, providing substantially higher bandwidth, far stronger random I/O capability, and enterprise-grade write endurance better suited to virtualization, OLTP databases, and high-duty caching tiers.

Endurance & Reliability

With an endurance rating of 29,200 TBW and 5 DWPD, the MZ-WLL3T2B is built for sustained heavy write workloads and can comfortably handle frequent full-drive writes every day throughout its intended service life. In practical terms, for typical enterprise deployments such as OS, virtualization, cache, or mixed application workloads, this level of endurance provides strong long-term headroom and supports worry-free operation over many years when used within specification. For enterprise reliability, built-in power loss protection (PLP) helps preserve in-flight data and protects metadata integrity during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. Its UBER of 1.0E-17 indicates an extremely low uncorrectable bit error rate, delivering the high data integrity expected in business-critical storage environments, while the 2 million hour MTBF further reinforces confidence in stable, continuous operation.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface provides enough host bandwidth to keep enterprise databases, virtual machines, and analytics jobs fed without the storage link becoming the bottleneck.
2. Its strong sequential read throughput helps shorten backup recovery, large-file transfers, and dataset loading for data-intensive server workloads.
3. The very high random read capability is ideal for OLTP, virtualization, and metadata-heavy applications that depend on fast access across massive numbers of small requests.
4. The high endurance rating makes this SSD well suited for write-intensive caching, logging, and mixed-workload environments that overwrite data continuously in production.
5. Samsung’s fifth-generation V-NAND TLC, combined with very low typical latency, delivers predictable QoS, efficient flash density, and responsive performance for always-on enterprise infrastructure.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB At 3.2 TB, this model sits in the sweet spot of the series. Compared with the 1.6 TB version, it gives much better headroom for data growth, overprovisioning, and mixed-workload consolidation without changing the expected enterprise-class performance profile. Compared with the 6.4 TB option, it avoids the steeper acquisition cost while still delivering enough usable capacity for mainstream infrastructure. In practice, 3.2 TB is a strong fit for mid-scale virtualization clusters, such as hosting boot and application volumes for roughly 40 to 60 business VMs per node.

FAQ