Samsung MZ-WLR1T90 1.92 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3500 MB/s
Random Read IOPS	1400000
Random Write IOPS	100000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR1T9HBJR

Engineer's Note

Compared with the previous MZWLR1T9HBJR generation, the MZ-WLR1T90 PM1733 advances to a PCIe Gen4 x4 architecture with Samsung 5th-Gen V-NAND, delivering up to 7,000/3,500 MB/s and 1,400,000 random-read IOPS for a clear uplift in bandwidth and transaction responsiveness. Its 1.92 TB capacity, 1 DWPD rating, and 3,504 TBW endurance make it a particularly strong fit for read-intensive virtualization, scale-out database, and analytics tiers that need next-generation performance without moving to a higher-endurance cost profile.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, the MZ-WLR1T90 is designed to support writing the full drive capacity once per day across its intended service life, which is more than sufficient for typical enterprise boot, system, and mixed-read workloads. In practical terms, under normal OS, application, logging, and virtualization usage, this level of endurance provides long-term headroom and can comfortably support many years of stable operation without wear concerns. For enterprise reliability, built-in power loss protection (PLP) helps preserve in-flight data and mapping tables during unexpected power interruptions, reducing the risk of data corruption and unclean shutdown events. Its UBER of 1.0E-17, together with a 2 million hour MTBF, reflects a very low uncorrectable bit error rate and strong overall dependability, giving procurement teams confidence in data integrity and platform stability.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface provides the bandwidth headroom needed to keep modern database, virtualization, and AI servers fed with data, reducing storage-side bottlenecks during peak workloads.
2. Its class-leading sequential read performance accelerates large-block operations such as analytics scans, backup restores, and model or media asset loading, helping cut job completion times.
3. Extremely high random read capability makes it well suited for latency-sensitive applications like OLTP databases, VDI boot storms, and high-concurrency web services where millions of small requests must be served smoothly.
4. A 1 DWPD endurance rating gives enterprises the confidence to run consistent daily full-drive rewrites over the warranty period, making it a practical fit for mixed-use production environments.
5. Samsung’s 5th-Gen high-layer 3D TLC V-NAND, paired with low typical latency, supports dense capacity with predictable responsiveness, enabling faster transaction handling and more stable QoS in always-on data center workloads.

Capacity Sweet

Lower-capacity reference: 960 GB Higher-capacity reference: 3.84 TB The 1.92 TB model sits in the sweet spot of this series. Compared with the 960 GB option, it gives much better headroom for OS images, application data, logs, and future growth, reducing the risk of early capacity pressure. Compared with the 3.84 TB version, it typically delivers a more attractive balance of acquisition cost, usable capacity, and enterprise-grade performance consistency. This makes 1.92 TB especially well suited for mid-scale virtualization clusters, database nodes, or hyperconverged infrastructure where predictable performance and efficient budget use matter most.

FAQ