Samsung MZ-WLR6T40 6.4 TB PM1735 PCIe Gen4 x8 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	6.4 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x8
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen TLC
Drive Writes Per Day	3
Total Bytes Written	35040 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	260000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR1T6HBJR-00AD9

Engineer's Note

Compared with MZWLR1T6HBJR-00AD9, the Samsung PM1735 MZ-WLR6T40 advances to a PCIe Gen4 x8 interface and 5th-Gen V-NAND TLC, delivering up to 7,000/3,800 MB/s sequential throughput and 1.45M/260K IOPS for materially higher bandwidth and transaction density in the same enterprise NVMe class. With 6.4 TB capacity, 3 DWPD endurance, and 35,040 TBW, it is a stronger fit than the prior generation for write-intensive virtualization, OLTP databases, and real-time analytics where sustained performance and media longevity are both critical.

Endurance & Reliability

With an endurance rating of 35,040 TBW and 3 DWPD, the MZ-WLR6T40 is designed to handle intensive enterprise write workloads over its service life, far beyond the needs of typical read-heavy or mixed-use deployments. In practical terms, for common server, virtualization, or system-disk usage, this level of endurance means the drive can support many years of stable operation with substantial write headroom. The MZ-WLR6T40 also includes power loss protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruption, reducing the risk of corruption and improving system integrity. Its UBER rating of 1.0E-17 indicates an extremely low unrecoverable bit error rate, which is a key enterprise-class reliability characteristic for safeguarding data accuracy in mission-critical environments.

Technical Specs & Insights

1. The full-lane PCIe Gen4 interface provides enough host bandwidth to keep analytics pipelines, large dataset scans, and AI model loading from being bottlenecked by storage.
2. Its strong sequential read performance accelerates backup restore, media streaming, and scale-out data ingestion where sustained throughput directly impacts job completion time.
3. The very high random read capability supports dense virtualization, OLTP databases, and metadata-heavy workloads by serving massive concurrent small-block requests with consistent responsiveness.
4. An endurance class designed for several full-drive rewrites each day makes it a safe fit for write-intensive enterprise roles such as caching, journaling, and high-churn transactional environments.
5. Samsung’s fifth-generation TLC V-NAND, paired with sub-100-microsecond typical latency, delivers a practical balance of capacity, efficiency, and fast response for latency-sensitive cloud and storage infrastructure.

Capacity Sweet

Lower capacity reference: 3.2 TB Higher capacity reference: 12.8 TB Capacity positioning analysis: In this series, the 6.4 TB model sits at a practical sweet spot. Compared with the 3.2 TB version, it gives meaningfully more headroom for data growth, denser VM placement, and longer refresh cycles without changing the expected enterprise-class read/write or IOPS profile. Compared with the 12.8 TB option, it delivers a better balance of usable capacity, acquisition cost, and fleet-wide efficiency, especially when ultra-high density is not mandatory. It is well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for around 40 to 60 mixed-workload virtual machines.

FAQ