Samsung MZ-WLR7T60 7.68 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	7.68 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 92-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	14016 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	135000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLR7T6HALA

Engineer's Note

Compared with the previous MZWLR7T6HALA generation, the Samsung PM1733 MZ-WLR7T60 moves to a PCIe Gen4 x4 architecture and delivers up to 7,000/3,800 MB/s sequential throughput with 1,450,000/135,000 IOPS, giving it a clear performance and latency advantage for modern server platforms. With 7.68 TB of Samsung 5th-Gen 92-layer 3D TLC V-NAND and 14,016 TBW at 1 DWPD, this drive is a strong fit for read-centric virtualization, scale-out databases, and high-density content delivery where sustained bandwidth and predictable endurance matter.

Endurance & Reliability

With an endurance rating of 14,016 TBW and 1 DWPD, the MZ-WLR7T60 is built to sustain writing its full capacity every day across the warranty period, making it well suited for steady enterprise workloads. In typical real-world use, this level of endurance is more than sufficient for long-term deployment as a system, boot, or mixed-use data drive, giving buyers strong confidence in its ability to handle continuous operation without premature wear. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity during unexpected power interruptions. Its ultra-low UBER of 1.0E-17, combined with a 2 million hour MTBF, indicates a very high standard of data integrity and operational reliability expected in business-critical storage environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface gives this drive the host-side bandwidth needed to keep modern dual-socket servers and GPU nodes fed without the storage link becoming the bottleneck.
2. Its top-tier sequential read performance accelerates large-block data movement, making it ideal for faster database warm-up, analytics scans, and AI model loading.
3. The combination of extremely high random-read capability and very low typical latency enables consistently fast response under heavily concurrent VM, OLTP, and metadata-intensive workloads.
4. A 1 DWPD endurance rating makes it well suited for always-on enterprise environments with steady daily rewrites, balancing durability with efficient cost per usable terabyte.
5. Samsung’s 5th-generation 92-layer 3D TLC V-NAND delivers enterprise-grade density, power efficiency, and write reliability for scalable deployment in capacity-conscious data centers.

Capacity Sweet

Lower capacity reference: 3.84 TB Higher capacity reference: 15.36 TB At 7.68 TB, this SSD sits in the sweet spot of the family. Compared with the 3.84 TB model, it gives much better headroom for OS images, application data, logs, and growth, reducing the risk of early capacity pressure while keeping the same class of enterprise read/write and random IOPS behavior. Compared with the 15.36 TB option, it usually delivers the best balance of acquisition cost, usable capacity, and fleet-wide efficiency. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and general-purpose storage for about 40 to 60 virtual machines.

FAQ