Samsung MZ-XL56T40 6.4 TB PM1735 PCIe Gen4 x8 HHHL Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	6.4 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x8
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	HHHL

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen TLC
Drive Writes Per Day	3
Total Bytes Written	35040 TBW

Performance

Sequential Read	8000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1500000
Random Write IOPS	250000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-XL56T4A

Engineer's Note

Compared with the previous MZ-XL56T4A, the 6.4TB Samsung PM1735 (MZ-XL56T40) delivers a clear generational step forward with PCIe Gen4 x8 bandwidth, up to 8,000/3,800 MB/s sequential performance, and 1.5M/250K IOPS to better serve latency-sensitive enterprise environments. Its 3 DWPD rating, 35,040 TBW endurance, and 5th-Gen Samsung V-NAND TLC make it a particularly strong fit for mixed-read/write database clusters, virtualization farms, and high-throughput analytics nodes that need both sustained speed and write durability.

Endurance & Reliability

With an endurance rating of 35,040 TBW and 3 DWPD, the MZ-XL56T40 is built for sustained enterprise write workloads and provides a very large write budget over its service life. In typical deployment scenarios, this level of endurance is more than sufficient for long-term use as a server boot drive or high-duty data drive, giving buyers strong confidence in stable operation over many years. For enterprise reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption or incomplete writes. Its UBER of 1.0E-17 indicates an extremely low uncorrectable bit error rate, supporting high data integrity in mission-critical environments, while the 2 million hour MTBF further reflects robust design for continuous operation.

Technical Specs & Insights

1. The PCIe Gen4 x8 interface provides the bandwidth headroom needed to keep dual-socket servers, GPU nodes, and high-core-count storage platforms fed without creating a bus bottleneck.
2. Its class-leading sequential read performance accelerates large-block workloads such as database backup restores, analytics scans, and AI dataset streaming by cutting bulk data access time.
3. The exceptionally high random read capability enables dense virtualization, OLTP databases, and metadata-heavy applications to sustain massive parallel transactions with consistently fast response.
4. With an enterprise-grade write endurance rating, this drive is built for write-intensive environments like logging, caching, and mixed database workloads where predictable lifespan directly lowers replacement risk.
5. Samsung fifth-generation V-NAND TLC, paired with very low typical latency, delivers a strong balance of capacity efficiency, response consistency, and power-optimized performance for always-on data center workloads.

Capacity Sweet

Reference capacities in the same series: Lower capacity: 3.2 TB Current model: 6.4 TB Higher capacity: 12.8 TB Capacity positioning analysis: Within this enterprise SSD family, 6.4 TB is the sweet-spot capacity. Compared with the 3.2 TB option, it gives substantially more headroom for mixed workloads, longer data growth cycles, and denser server consolidation without changing the expected enterprise-class read/write or random IOPS profile. Compared with the 12.8 TB model, it typically offers a more attractive balance of acquisition cost, usable capacity, and operational efficiency. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for about 60 to 80 virtual machines.

FAQ