Samsung MZ-XLR15T0 15.36TB PM1733 PCIe Gen4 x4 2.5-inch Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	15.36TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	2.5-inch

Flash & Endurance

NAND Flash	Samsung V-NAND TLC
Drive Writes Per Day	1
Total Bytes Written	28032 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-XLN15T0

Engineer's Note

Compared with the previous-generation MZ-XLN15T0, the Samsung PM1733 MZ-XLR15T0 moves to PCIe Gen4 x4 and delivers up to 7,000/3,800 MB/s with 1,450,000/115,000 IOPS, giving it a clear generational advantage in host bandwidth and random-read performance for latency-sensitive enterprise platforms. With 15.36TB of Samsung V-NAND TLC plus 1 DWPD and 28,032 TBW endurance, it is a strong fit for dense virtualization, large-scale OLTP, and mixed read-centric cloud workloads that need high capacity without sacrificing enterprise durability.

Endurance & Reliability

With an endurance rating of 28,032 TBW and 1 DWPD, the MZ-XLR15T0 is designed to sustain heavy, continuous write workloads throughout its service life. In practical terms, this level of endurance is more than sufficient for typical enterprise system-disk or mixed-use deployments, providing long-term operational confidence and making 24/7 use over many years well within its intended design range. The MZ-XLR15T0 also includes power loss protection (PLP), which helps preserve in-flight data and prevent metadata corruption if power is suddenly interrupted, an essential safeguard for business-critical environments. Its enterprise-class UBER of 1.0E-17, together with a 2 million hour MTBF, indicates an extremely low probability of unrecoverable bit errors and a strong overall reliability profile for procurement teams evaluating data integrity and platform stability.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface gives the MZ-XLR15T0 enough host bandwidth to keep modern servers fed, reducing storage bottlenecks in virtualization, analytics, and GPU-accelerated workloads.
2. Its top-tier sequential read performance accelerates large-block data movement, shortening database warm-up, backup restore, and AI model loading windows.
3. The exceptionally strong random read capability enables this drive to sustain dense VM farms, high-concurrency OLTP, and metadata-heavy applications with fast user response under load.
4. A 1 DWPD endurance profile makes it a practical fit for read-intensive enterprise deployments that still need predictable write headroom across the full warranty life.
5. Samsung V-NAND TLC paired with very low typical latency delivers an effective balance of capacity efficiency, consistent QoS, and rapid transaction servicing for business-critical infrastructure.

Capacity Sweet

Lower capacity reference: 7.68TB Higher capacity reference: 30.72TB At 15.36TB, the MZ-XLR15T0 sits at the sweet spot of the family. Compared with the 7.68TB model, it gives much better headroom for data growth, higher VM density, and longer refresh cycles without changing the performance profile. Compared with the 30.72TB model, it typically delivers a more attractive balance of acquisition cost, usable capacity, and deployment flexibility while keeping enterprise-class sequential and random performance essentially similar. This capacity is especially well suited for mid-scale virtualization clusters, high-density read-heavy databases, and consolidated application storage nodes.

FAQ