Samsung MZ1L23T8HBLA-00B7C 3.84 TB PM9A3 PCIe Gen4 x4 E1.S Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM9A3
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	E1.S

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	6900 MB/s
Sequential Write	4100 MB/s
Random Read IOPS	1100000
Random Write IOPS	180000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ1L23T8HBLA-00A07

Engineer's Note

Compared with MZ1L23T8HBLA-00A07, the MZ1L23T8HBLA-00B7C is the newer PM9A3 revision, leveraging Samsung 6th-Gen 128-layer V-NAND to deliver a stronger Gen4 x4 performance envelope of up to 6,900/4,100 MB/s and 1,100,000/180,000 IOPS for faster response in mixed enterprise workloads. Its standout value is pairing 3.84 TB capacity with 1 DWPD and 7008 TBW, making it a well-balanced upgrade for virtualized infrastructure, read-heavy databases, and cloud storage nodes that need higher throughput and enterprise endurance without moving to a higher-cost endurance class.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, the MZ1L23T8HBLA-00B7C is designed to handle the equivalent of writing its full capacity once per day across its rated service life, which is more than sufficient for typical enterprise OS boot, virtualization, logging, and read-heavy application workloads. In practical terms, for use as a system or infrastructure drive under normal daily write levels, this endurance provides long-term headroom and supports stable operation over many years without endurance becoming a concern. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is interrupted unexpectedly, reducing the risk of corruption and unplanned recovery events. Its UBER of 1.0E-17 and 2 million-hour MTBF indicate an enterprise-class design with an extremely low probability of unrecoverable read errors and strong long-term operational reliability for data center environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface provides the bandwidth headroom modern servers need to keep CPUs and GPUs fed, reducing storage bottlenecks in virtualization, analytics, and AI pipelines.
2. With sequential reads up to 6900 MB/s, this SSD accelerates large-file movement, cutting data loading and backup windows for media, HPC, and data lake workloads.
3. Up to 1,100,000 K random read IOPS, paired with an 85 µs typical latency, enables fast response for metadata-heavy databases, dense VM environments, and latency-sensitive online services.
4. A 1 DWPD endurance rating makes it well suited for mixed-use enterprise deployments that require predictable write life across years of continuous operation.
5. Samsung 6th-Gen 128-layer 3D TLC V-NAND delivers a strong balance of density, power efficiency, and reliability, helping lower infrastructure cost without sacrificing enterprise-class performance.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB At 3.84 TB, this SSD sits at the sweet spot of the series. Compared with the 1.92 TB model, it gives materially better headroom for dataset growth, overprovisioning flexibility, and mixed-workload consolidation without changing the expected enterprise-class read/write and random IOPS profile. Compared with the 7.68 TB option, it typically delivers a more attractive cost-per-deployment while avoiding unnecessary capacity that many mainstream server nodes may not fully use. It is especially well suited for mid-scale virtualization clusters, database replicas, or hyperconverged nodes serving roughly 50 to 80 business applications.

FAQ