Samsung MZ1LB1T9HALS-00007 1.92 TB PM983 PCIe 3.0 x4, NVMe 1.2 M.2 (22110) Enterprise/Read-Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	1.92 TB
Usage Class	Enterprise/Read-Intensive

Interface

Host Interface	PCIe 3.0 x4, NVMe 1.2
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	M.2 (22110)

Flash & Endurance

NAND Flash	Samsung V4 (64L) TLC
Drive Writes Per Day	1.3
Total Bytes Written	2733 TBW

Performance

Sequential Read	3000 MB/s
Sequential Write	1900 MB/s
Random Read IOPS	540000
Random Write IOPS	40000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ1KW1T9HMLG-00003

Engineer's Note

Compared with MZ1KW1T9HMLG-00003, the MZ1LB1T9HALS-00007 PM983 is a stronger endurance-focused refresh, using Samsung V4 (64L) TLC to deliver 2,733 TBW and 1.3 DWPD for better sustained write reliability in enterprise deployments. Its 3,000/1,900 MB/s throughput and 540K/40K IOPS make the 1.92 TB drive especially well suited to latency-sensitive virtualization, database, and caching tiers that need high read concurrency and predictable QoS.

Endurance & Reliability

With an endurance rating of 2,733 TBW and 1.3 DWPD, the MZ1LB1T9HALS-00007 is built to handle sustained daily write activity well beyond typical OS, boot, and general enterprise application workloads. In practical terms, for common system-disk or read-centric server deployments, this level of endurance supports many years of stable operation and provides comfortable headroom for long-term use. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve data integrity by protecting in-flight data and metadata if power is suddenly interrupted. Its UBER of 1.0E-17, together with a 2 million-hour MTBF, indicates a very low likelihood of unrecoverable bit errors and supports dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe 3.0 x4 interface with NVMe 1.2 gives this drive low-overhead, parallel access that helps enterprise servers clear storage bottlenecks in virtualization, database, and scale-out application nodes.
2. With 3000 MB/s sequential read performance, it can accelerate large-block workloads such as analytics scans, backup restores, and VM image loading to reduce wait time across shared infrastructure.
3. Its 540,000 K random read IOPS capability is well suited for latency-sensitive OLTP, metadata-heavy cloud workloads, and high-concurrency read caching where consistent transaction response matters.
4. Rated at 1.3 DWPD, the drive provides the endurance profile enterprises need for mixed-use deployments, supporting sustained daily overwrite activity without forcing an early replacement cycle.
5. Built on Samsung V4 64-layer TLC NAND and tuned for a typical latency of 85 µs, it balances flash density with responsive service times, making it a practical fit for mainstream enterprise tiers that need both capacity efficiency and predictable performance.

Capacity Sweet

Lower capacity reference: 960 GB Higher capacity reference: 3.84 TB The 1.92 TB MZ1LB1T9HALS sits at the sweet spot of the series. Compared with the 960 GB model, it gives administrators far more headroom for OS images, application growth, log retention, and overprovisioning flexibility, reducing the risk of early capacity pressure. Compared with the 3.84 TB option, it delivers a better balance of acquisition cost, usable capacity, and enterprise-grade performance consistency, since sequential and random I/O remain broadly similar across these tiers. It is especially well suited for mid-scale virtualization clusters, such as hosting system and boot volumes for about 40 to 60 virtual machines.

FAQ