Samsung MZ1LB3T8HMLA-00007 3.84 TB PM983 PCIe Gen3 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	32 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	1.3
Total Bytes Written	5466 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2400 MB/s
Random Read IOPS	540000
Random Write IOPS	50000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ1LB1T9HALS-00007

Engineer's Note

The Samsung PM983 MZ1LB3T8HMLA-00007 delivers a strong balance of enterprise performance and endurance, combining 3.84 TB of Samsung V-NAND 3D TLC with up to 3,200/2,400 MB/s sequential throughput and 540,000/50,000 IOPS for read-centric cloud, virtualization, and scale-out storage workloads. Compared with the previous MZ1LB1T9HALS-00007, this model effectively doubles deployable capacity while increasing total endurance to 5,466 TBW, enabling higher rack-level storage density and lower drive-count overhead without moving beyond a PCIe Gen3 x4 infrastructure.

Endurance & Reliability

With an endurance rating of 5,466 TBW and 1.3 DWPD, the MZ1LB3T8HMLA-00007 is built to handle sustained daily write activity far beyond typical system-boot or general server workloads. In practical terms, for common enterprise OS, application, and read-intensive deployment scenarios, this level of endurance provides long-term confidence and can comfortably support many years of normal use without endurance becoming a concern. This drive also includes enterprise-grade power loss protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving operational resilience. Combined with an ultra-low UBER of 1.0E-17 and a 2 million hour MTBF, it offers the high data integrity and reliability level that procurement teams expect for business-critical infrastructure.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface provides a balanced enterprise bandwidth path that accelerates virtualization, database access, and storage node responsiveness without requiring a platform upgrade to newer bus generations.
2. With 3200 MB/s sequential read performance, this drive shortens boot storms, large dataset ingestion, and backup restore windows in read-intensive server environments.
3. Delivering 540,000 K IOPS in random reads, it is well suited for high-concurrency OLTP, VDI, and metadata-heavy workloads where fast small-block access directly improves user-perceived speed.
4. Rated at 1.3 DWPD and built on Samsung V-NAND 3D TLC, it offers enterprise-grade write endurance with a cost-efficiency profile that fits mixed-use deployments running continuously across the warranty period.
5. A typical latency of 85 µs helps reduce tail-response delays, supporting more predictable application performance in latency-sensitive transactional and cloud service workloads.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB Capacity positioning analysis: In this SSD family, 3.84 TB is the sweet-spot capacity. Compared with the 1.92 TB model, it gives much better headroom for data growth, denser server consolidation, and longer refresh cycles without changing the expected enterprise-class read/write or random IOPS profile. Compared with the 7.68 TB option, it usually delivers the best balance between acquisition cost, usable capacity, and performance consistency. This makes 3.84 TB especially well suited for mid-scale virtualization clusters, database nodes, and mixed-read/write application servers supporting roughly 40-70 business workloads.

FAQ