Samsung MZ7WD480HCGM 480GB SM843T SATA 6.0 Gb/s 2.5 inch Mixed Use / Data Center Solid State Drive

General

Brand	Samsung
Model	SM843T
Capacity	480GB
Usage Class	Mixed Use / Data Center

Interface

Host Interface	SATA 6.0 Gb/s
Total Interface Bandwidth	6 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung 24nm eMLC
Drive Writes Per Day	3.7
Total Bytes Written	3240 TBW

Performance

Sequential Read	500 MB/s
Sequential Write	370 MB/s
Random Read IOPS	98000
Random Write IOPS	15000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ7WD480HAGM

Engineer's Note

Compared with the earlier MZ7WD480HAGM, the MZ7WD480HCGM strengthens the SM843T 480GB platform with a more endurance-focused enterprise profile, pairing 3.7 DWPD and 3,240 TBW with Samsung 24nm eMLC for better sustained write-life and steadier long-term behavior in 24x7 deployments. For read-heavy to mixed transactional workloads, it delivers near-limit SATA throughput at 500/370 MB/s and up to 98,000 random-read IOPS, giving it a clear advantage over typical same-class SATA SSDs that trade endurance for capacity or peak burst speed.

Endurance & Reliability

With an endurance rating of 3,240 TBW and 3.7 DWPD, the MZ7WD480HCGM is designed to handle heavy write-intensive workloads over its service life, making it far more robust than what is typically required for OS boot, application, or general server storage. In practical terms, under typical enterprise system-disk usage, this level of endurance provides substantial headroom for many years of reliable operation without endurance becoming a concern. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is suddenly interrupted. Its UBER rating of 1.0E-17 indicates an extremely low probability of unrecoverable bit errors, supporting high data integrity expectations in business-critical environments.

Technical Specs & Insights

1. The SATA interface, paired with near bus-saturating sequential throughput, makes this drive a drop-in upgrade for legacy enterprise servers and storage arrays that need faster boot, backup, and log-streaming performance without changing platform architecture.
2. Its strong random-read capability helps VDI, OLTP, and metadata-heavy workloads return small-block data quickly, increasing VM density and improving application responsiveness under concurrent access.
3. With an endurance profile built for multiple full-drive rewrites per day, it is well suited for write-intensive enterprise roles such as databases, caching tiers, and high-churn virtualization environments.
4. Samsung eMLC NAND provides a better balance of write durability, data integrity, and consistent sustained performance than client-grade flash, supporting long-life operation in always-on datacenter deployments.
5. The low typical latency enables faster transaction turnaround and tighter QoS control, which is critical for latency-sensitive services like real-time analytics, index lookups, and busy virtualized workloads.

Capacity Sweet

Lower capacity reference: 240GB (MPN: MZ7WD240HCGM) Higher capacity reference: 960GB (MPN: MZ7WD960HCGM) At 480GB, the MZ7WD480HCGM sits in the sweet spot of this enterprise SSD family. Compared with the 240GB model, it provides much better headroom for OS images, logs, application growth, and overprovisioning flexibility, reducing the risk of early capacity pressure. Compared with the 960GB version, it keeps acquisition cost and fleet standardization easier while delivering essentially the same class of sequential throughput and random IOPS expected from the series. It is especially well suited for mid-scale virtualization clusters, such as boot and infrastructure storage for about 40 to 60 business application instances.

FAQ