Samsung MZILG800HCHQ-00AH3 800 GB PM1655 SAS 24Gb/s 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1655
Capacity	800 GB
Usage Class	Mixed Use

Interface

Host Interface	SAS 24Gb/s
Total Interface Bandwidth	24 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 128-layer 3D TLC
Drive Writes Per Day	3
Total Bytes Written	4380 TBW

Performance

Sequential Read	4200 MB/s
Sequential Write	1700 MB/s
Random Read IOPS	770000
Random Write IOPS	190000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT800HCHP

Engineer's Note

Compared with the previous-generation MZILT800HCHP, the Samsung PM1655 (MZILG800HCHQ-00AH3) advances to a 24Gb/s SAS interface and 128-layer V-NAND, delivering up to 4,200/1,700 MB/s and 770K/190K IOPS for substantially higher bandwidth and transactional performance in the same 800 GB class. With 3 DWPD and 4,380 TBW, this model is a strong fit for latency-sensitive enterprise databases, virtualization clusters, and mixed read/write OLTP workloads that need SAS dual-port reliability without sacrificing flash endurance.

Endurance & Reliability

With an endurance rating of 4,380 TBW and 3 DWPD, the MZILG800HCHQ-00AH3 is built to handle sustained enterprise write workloads throughout its service life. In practical terms, this level of endurance is more than sufficient for use as a system or application drive under typical business workloads, providing long-term write headroom and dependable operation over years of deployment. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protect metadata integrity if power is interrupted unexpectedly. Its UBER of 1.0E-17 indicates an extremely low likelihood of unrecoverable bit errors during reads, supporting high data integrity for business-critical environments.

Technical Specs & Insights

1. The SAS 24Gb/s interface gives this drive dual-port enterprise connectivity and high-availability path redundancy, making it well suited for mission-critical storage arrays and failover-sensitive server environments.
2. With 4200 MB/s sequential read performance, it accelerates large block data movement such as backup restores, media streaming, and analytics dataset ingestion.
3. Delivering 770,000 K IOPS random read performance with a typical latency of 85 µs, it supports highly responsive database, virtualization, and OLTP workloads where fast access to small data blocks directly improves application QoS.
4. The 3 DWPD endurance rating enables sustained heavy write activity over the service life of the SSD, reducing replacement risk in write-intensive enterprise deployments.
5. Built on Samsung V-NAND 128-layer 3D TLC, it balances enterprise-class density, power efficiency, and reliability, helping data centers scale capacity without sacrificing consistent performance.

Capacity Sweet

Reference capacities in the same series: Lower capacity: 400 GB Higher capacity: 1.6 TB Capacity positioning analysis: At 800 GB, this drive sits in the sweet spot of the family. Compared with the 400 GB model, it gives materially better headroom for OS images, logs, swap, metadata, and short-term workload growth, reducing early capacity pressure. Compared with the 1.6 TB option, it keeps acquisition cost and usable overprovisioning in a more efficient balance while delivering essentially the same enterprise-class throughput and IOPS profile. It is best suited for mid-scale deployments, such as a 3-node virtualization cluster or a compact database and analytics edge stack.

FAQ