Samsung MZILG800HCHQAD3 800 GB PM1655 SAS 24.0 Gbps 2.5" Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1655
Capacity	800 GB
Usage Class	Mixed Use

Interface

Host Interface	SAS 24.0 Gbps
Total Interface Bandwidth	24 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung V-NAND 6th-Gen 128-layer 3D TLC
Drive Writes Per Day	3
Total Bytes Written	4380 TBW

Performance

Sequential Read	4200 MB/s
Sequential Write	3700 MB/s
Random Read IOPS	800000
Random Write IOPS	210000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILG800HCHQ-00007

Engineer's Note

Compared with the earlier MZILG800HCHQ-00007, the MZILG800HCHQAD3 is the stronger PM1655 build for 24.0 Gbps SAS deployments, pairing Samsung 6th-Gen 128-layer V-NAND with up to 4,200/3,700 MB/s throughput and 800,000/210,000 IOPS to deliver better bandwidth utilization and lower latency in the same 800 GB class. Its 3 DWPD rating and 4,380 TBW endurance make it a more compelling choice for write-intensive databases, virtualization clusters, and transaction-heavy enterprise workloads where sustained performance consistency matters more than raw capacity.

Endurance & Reliability

With an endurance rating of 4,380 TBW and 3 DWPD, this SSD is designed to sustain writing its full 800 GB capacity three times per day over a five-year usage model, which is well beyond the demands of most server boot, OS, and mainstream enterprise application workloads. In typical lighter-write scenarios, such as use as a system disk or read-centric enterprise storage, this level of endurance provides strong long-term headroom and helps minimize concerns about premature wear. Enterprise-grade reliability is further reinforced by built-in Power Loss Protection (PLP), which helps preserve in-flight data and mapping information during unexpected power interruptions, reducing the risk of corruption or incomplete writes. Its UBER of 1.0E-17 indicates an extremely low unrecoverable bit error rate, supporting high data integrity expectations in business-critical environments, while the 2.5 million-hour MTBF reflects a design focused on dependable continuous operation.

Technical Specs & Insights

1. The SAS 24.0 Gbps interface provides dual-port, enterprise-grade connectivity that improves high-availability storage design and keeps mission-critical servers online during path failover.
2. Its 4200 MB/s sequential read speed accelerates large dataset scans, backup restores, and analytics workloads, helping reduce batch-processing windows in the data center.
3. With 800,000 K IOPS random-read performance and 85 µs typical latency, the drive sustains fast response times for transaction-heavy databases and densely virtualized environments under peak concurrency.
4. A 3 DWPD endurance rating makes it well suited for write-intensive enterprise applications such as logging, caching, and mixed-workload database tiers that demand predictable lifespan.
5. Samsung V-NAND 6th-Gen 128-layer 3D TLC combines high density with enterprise-class efficiency and consistency, enabling better capacity scaling without sacrificing dependable performance.

Capacity Sweet

Lower capacity reference: 400 GB Higher capacity reference: 1.6 TB Capacity positioning analysis: In this SSD family, the 800 GB model sits at a practical sweet spot. Compared with the 400 GB version, it offers noticeably better headroom for OS images, logs, metadata, and short-term workload growth, reducing the risk of early capacity pressure. Compared with the 1.6 TB option, it keeps acquisition cost and $/deployment under tighter control while delivering essentially the same enterprise-class sequential and random performance profile. This makes 800 GB especially well suited for medium-scale virtualization clusters, such as hosting boot and utility volumes for about 40 to 60 virtual machines.

FAQ