Samsung MZILS1T6HEJH-000C4 1.6 TB PM1635A SAS 12.0 Gbps 2.5" Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1635A
Capacity	1.6 TB
Usage Class	Mixed Use

Interface

Host Interface	SAS 12.0 Gbps
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5"

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	3
Total Bytes Written	8760 TBW

Performance

Sequential Read	1350 MB/s
Sequential Write	1200 MB/s
Random Read IOPS	190000
Random Write IOPS	50000
Average Latency	110 μs

Reliability

Mean Time Between Failures	2.5 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-V9S1T0

Engineer's Note

Compared with the MZ-V9S1T0, the Samsung PM1635A (MZILS1T6HEJH-000C4) steps up to an enterprise SAS 12.0 Gbps platform with 3 DWPD endurance and 8,760 TBW, giving it materially stronger write durability, availability, and integration for 24/7 server and storage-array deployments. Its 1.6 TB Samsung V-NAND 3D TLC design delivers up to 1350/1200 MB/s and 190,000/50,000 IOPS, making it a stronger fit for mixed-read/write virtualization, OLTP databases, and latency-sensitive enterprise workloads than lower-end or client-oriented predecessors.

Endurance & Reliability

With an endurance rating of 8,760 TBW and 3 DWPD, the MZILS1T6HEJH-000C4 is built for sustained enterprise write workloads, allowing the full drive capacity to be written three times per day throughout its rated service life. In typical deployment scenarios, this level of endurance is far beyond ordinary OS, boot, logging, and mainstream application needs, giving buyers strong confidence that it can operate as a system or mixed-use drive for many years without endurance-related concern. For reliability, the drive includes power-loss protection (PLP), which helps preserve in-flight data and maintain metadata integrity if power is suddenly interrupted, reducing the risk of corruption and unplanned recovery events. Its enterprise-class UBER of 1.0E-17, together with a 2.5 million hour MTBF, indicates an extremely low probability of unrecoverable bit errors and supports dependable operation in business-critical storage environments.

Technical Specs & Insights

1. The SAS 12Gb/s interface paired with strong sequential bandwidth accelerates full-dataset scans, backup streams, and analytics jobs while preserving the dual-port reliability enterprises expect in mission-critical storage.
2. Its high random read capability sustains fast response under heavily concurrent database, virtualization, and metadata-intensive workloads, helping prevent performance bottlenecks during peak demand.
3. A 3 DWPD endurance rating makes it well suited for write-intensive enterprise use cases such as OLTP, logging, caching, and mixed-workload servers that require predictable lifespan under continuous daily rewrites.
4. Samsung V-NAND 3D TLC provides a strong balance of capacity, cost efficiency, and power-conscious performance, making it a practical fit for large-scale data center deployments.
5. The low typical latency helps applications deliver quicker transaction acknowledgment and more consistent QoS, which is especially valuable for latency-sensitive databases and virtualized infrastructure.

Capacity Sweet

Lower capacity reference: 800 GB Higher capacity reference: 3.2 TB In this series, the 1.6 TB model sits at a practical sweet spot. Compared with the 800 GB option, it gives much better headroom for OS images, logs, hot data, and moderate growth, reducing early capacity pressure without changing the expected enterprise-class read/write and random IOPS profile. Compared with the 3.2 TB version, it usually delivers the best balance between acquisition cost, usable capacity, and steady performance consistency. It is well suited for mid-scale virtualization clusters, such as shared storage for roughly 40-60 general-purpose virtual machines.

FAQ