Samsung MZILS1T6HEJH0D3 1.6TB PM1635a SAS 12Gb/s 2.5 inch Enterprise Solid State Drive

General

Brand	Samsung
Model	PM1635a
Capacity	1.6TB
Usage Class	Enterprise

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3bit MLC (TLC)
Drive Writes Per Day	3
Total Bytes Written	8760 TBW

Performance

Sequential Read	1350 MB/s
Sequential Write	1100 MB/s
Random Read IOPS	190000
Random Write IOPS	35000
Average Latency	110 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILS1T6HEGR

Engineer's Note

Compared with the earlier MZILS1T6HEGR, the MZILS1T6HEJH0D3 PM1635a delivers a more deployment-ready balance of endurance and sustained SAS performance in the 1.6TB class, with 3 DWPD, 8,760 TBW, and up to 1350/1100 MB/s throughput. Its 12Gb/s SAS interface, 190K/35K IOPS profile, and Samsung V-NAND make it a strong fit for write-intensive virtualization, database logging, and mixed-enterprise workloads where higher reliability and better steady-state consistency matter more than raw peak speed.

Endurance & Reliability

With an endurance rating of 8,760 TBW and 3 DWPD, the MZILS1T6HEJH0D3 is designed to sustain intensive enterprise write workloads over its service life. In practical terms, for typical mixed-use or OS/application drive scenarios, this level of endurance provides ample headroom for many years of reliable operation, including use as a system drive with no concern about normal daily write activity. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and prevents metadata corruption during unexpected power interruptions. Its UBER specification of 1.0E-17, together with a 2 million hour MTBF, reflects a high-integrity storage design that minimizes unrecoverable read errors and supports dependable long-term deployment in business-critical environments.

Technical Specs & Insights

1. The SAS 12Gb/s interface provides dual-port, enterprise-grade connectivity that simplifies high-availability storage design and enables reliable integration into mission-critical server and array environments.
2. With 1350 MB/s sequential read performance, the drive accelerates large-block workloads such as database backup, virtual machine image loading, and analytics dataset streaming.
3. Delivering 190,000 K IOPS random read with 110 µs typical latency, it helps transactional platforms respond faster under heavy concurrency, reducing application wait time in OLTP and virtualized environments.
4. The 3 DWPD endurance rating makes it well suited for write-intensive enterprise use cases, supporting sustained daily overwrite activity in logging, caching, and mixed database workloads.
5. Samsung V-NAND 3bit MLC (TLC) balances enterprise capacity, power efficiency, and cost, giving data centers a practical flash foundation for scaling mainstream business storage tiers.

Capacity Sweet

Lower capacity reference: 800GB Higher capacity reference: 3.2TB In this series, the 1.6TB MZILS1T6HEJH0D3 sits in the sweet spot. Compared with the 800GB model, it gives much more headroom for OS images, application growth, and mixed enterprise workloads without forcing early storage expansion. Compared with the 3.2TB model, it keeps acquisition cost and capacity overprovisioning under better control while delivering essentially the same sequential and random performance profile. This makes 1.6TB an efficient mainstream choice for mid-scale virtualization, such as a 12 to 16 node cluster supporting about 180 to 250 general-purpose virtual desktops or light business VMs.

FAQ