Samsung MZILS3T8HCJM 3.84TB PM1633 Series SAS 12Gb/s 2.5 15mm Enterprise Data Center / Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1633 Series
Capacity	3.84TB
Usage Class	Enterprise Data Center / Read Intensive

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5 15mm

Flash & Endurance

NAND Flash	Samsung 32-layer 3D V-NAND TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	1200 MB/s
Sequential Write	900 MB/s
Random Read IOPS	160000
Random Write IOPS	18000
Average Latency	110 μs

Reliability

Mean Time Between Failures	2.0 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILS3T8HCJM-00007

Engineer's Note

Compared with the earlier MZILS3T8HCJM-00007, the MZILS3T8HCJM refreshes the PM1633 3.84TB platform with Samsung 32-layer 3D V-NAND TLC, giving engineers a newer-generation flash design with better density efficiency and more consistent enterprise SAS performance behavior. With 12Gb/s SAS, 1200/900 MB/s throughput, up to 160,000/18,000 IOPS, and 7008 TBW at 1 DWPD, it is a strong fit for read-centric virtualization clusters, scale-out storage nodes, and database tiers that need predictable latency and high capacity without moving to a higher-endurance cost point.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, the MZILS3T8HCJM is designed to handle writing its full capacity once per day across its rated service life, which is more than sufficient for typical enterprise boot, application, and mixed-read workloads. In practical terms, under normal system-disk or mainstream server usage, this level of endurance provides long-term write headroom and supports years of stable operation without endurance becoming a concern. For enterprise reliability, built-in power loss protection (PLP) helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and improving recovery confidence. Its UBER of 1.0E-17 and 2 million-hour MTBF indicate a very low probability of uncorrectable bit errors and strong overall operational reliability, giving procurement teams confidence for business-critical deployments.

Technical Specs & Insights

1. The SAS 12Gb/s interface enables seamless deployment in dual-port enterprise storage systems, providing the reliability, compatibility, and path redundancy required for mission-critical infrastructure.
2. With 1200 MB/s sequential read performance, the drive speeds up backup recovery, large-file access, and analytics dataset loading to reduce application wait time.
3. Its 160,000 random-read IOPS capability improves VM density and database responsiveness by handling high volumes of small-block requests with less contention.
4. Rated at 1 DWPD, the SSD is well suited for mixed-use enterprise environments that need dependable daily write capacity without the cost premium of heavy-write media.
5. Samsung 32-layer 3D V-NAND TLC paired with 110 µs typical latency delivers a practical balance of flash efficiency and consistently quick response for transactional and latency-sensitive workloads.

Capacity Sweet

Reference capacities in the same series: Lower capacity: 1.92TB Higher capacity: 7.68TB Capacity positioning analysis: Within this enterprise SSD family, 3.84TB is the sweet-spot capacity. Compared with 1.92TB, it gives much better headroom for VM growth, log retention, and mixed application datasets, reducing the risk of early overprovisioning pressure. Compared with 7.68TB, it usually delivers a more attractive balance of acquisition cost, usable capacity, and enterprise-grade performance consistency, while keeping sequential throughput and random IOPS in the same mainstream class. It is especially well suited for mid-scale virtualization clusters, database nodes, and dense boot-plus-cache deployments in 2U servers.

FAQ