Samsung MZILT3T8HALS0D4 3.84 TB PM1643 SAS 12Gb/s 2.5 inch Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1643
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3bit MLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	2100 MB/s
Sequential Write	1700 MB/s
Random Read IOPS	400000
Random Write IOPS	40000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT3T8HMLH-00007

Engineer's Note

Compared with the previous-generation MZILT3T8HMLH-00007, the Samsung PM1643 MZILT3T8HALS0D4 delivers a stronger 12Gb/s SAS value point by combining 3.84 TB capacity with up to 2100/1700 MB/s throughput and 400,000/40,000 IOPS, enabled by Samsung V-NAND 3bit MLC for higher-density enterprise deployment. With 1 DWPD and 7,008 TBW, it is a well-balanced upgrade for read-intensive virtualization clusters, scale-out storage, and database servers that need more usable capacity and faster response within the same SAS infrastructure.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, this SSD is designed to handle writing its full capacity every day across the warranty period, which is more than sufficient for typical enterprise boot, system, and read-mixed application workloads. In practical terms, for common OS, virtualization, and server system-disk use, this level of endurance supports many years of stable operation with substantial write headroom, giving buyers confidence in long-term deployment. This model also includes power loss protection (PLP), which helps preserve in-flight data and protects mapping tables during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. Its enterprise-class UBER of 1.0E-17 and 2 million-hour MTBF indicate a very low uncorrectable bit error rate and strong overall reliability, making it well suited for data center and business-critical environments.

Technical Specs & Insights

1. The SAS interface provides dual-port, high-availability connectivity, making this drive a strong fit for mission-critical servers and storage arrays that demand continuous access and predictable failover.
2. Its strong sequential read capability accelerates large-block workloads such as backup restores, media streaming, and analytics scans, helping reduce data access bottlenecks across shared enterprise storage.
3. The high random read performance, paired with very low typical latency, enables faster transaction response and denser VM consolidation in databases, virtualization clusters, and read-heavy cloud services.
4. The endurance rating supports one full-capacity overwrite per day throughout the warranty period, giving enterprises a dependable balance of lifespan and cost for mixed-use workloads.
5. Samsung V-NAND based on TLC architecture improves flash density and power efficiency while maintaining the consistency and reliability required for always-on data center operations.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB Both adjacent capacities in the same series generally deliver broadly similar sequential read/write throughput and random IOPS to the 3.84 TB model, which is typical for enterprise SSD product stacks. At 3.84 TB, this drive sits in the sweet spot of the series. Compared with 1.92 TB, it gives much better space headroom for OS images, logs, hot data, and growth without forcing early expansion. Compared with 7.68 TB, it usually offers a more efficient balance of acquisition cost, usable capacity, and steady enterprise performance. It is especially well suited for mid-scale virtualization clusters, such as shared storage for roughly 40 to 60 general-purpose virtual machines or a compact mixed database/application node pool.

FAQ