Samsung MZILT800HBHQAD3 800 GB PM1645A SAS 12Gb/s 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1645A
Capacity	800 GB
Usage Class	Mixed Use

Interface

Host Interface	SAS 12Gb/s
Total Interface Bandwidth	12 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	3
Total Bytes Written	4380 TBW

Performance

Sequential Read	1000 MB/s
Sequential Write	1000 MB/s
Random Read IOPS	230000
Random Write IOPS	90000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT800HCHG-00007

Engineer's Note

The PM1645A MZILT800HBHQAD3 is a strong fit for latency-sensitive enterprise databases, virtualization clusters, and mixed read/write OLTP workloads, combining 1,000/1,000 MB/s throughput with 230,000/90,000 random IOPS in an 800 GB SAS 12Gb/s drive. Compared with the previous-generation MZILT800HCHG-00007, it advances to the PM1645A platform with Samsung V-NAND 3D TLC, delivering a more modern endurance-performance profile at 3 DWPD and 4,380 TBW while preserving seamless integration into existing 12Gb/s SAS infrastructures.

Endurance & Reliability

With an endurance rating of 4,380 TBW and 3 DWPD, the MZILT800HBHQAD3 is designed to handle heavy daily write activity across its warranty period and well beyond typical business workloads. In practical terms, for common OS, application, logging, and mixed enterprise storage use, this level of endurance means it can serve reliably as a system or workload drive for many years without endurance becoming a concern. For enterprise reliability, built-in power loss protection helps preserve in-flight data and protect metadata integrity if power is interrupted unexpectedly, reducing the risk of corruption and downtime. Its 1.0E-17 UBER and 2 million-hour MTBF indicate a very low probability of unrecoverable bit errors and strong long-term operational reliability, which supports confident deployment in business-critical environments.

Technical Specs & Insights

1. The SAS 12Gb/s interface ensures seamless integration with mainstream enterprise storage backplanes, enabling dependable dual-port connectivity and easier scaling in mission-critical servers and arrays.
2. The 1000 MB/s sequential read performance accelerates large-block workloads such as backup restores, media streaming, and analytics data scans, reducing time-to-data for business applications.
3. With 230,000 random read IOPS and a typical latency of 100 µs, the drive sustains fast response under highly concurrent transaction loads, helping databases and virtualized environments stay consistently responsive.
4. A 3 DWPD endurance rating makes this SSD well suited for write-intensive enterprise duties like OLTP, logging, and caching, where predictable lifespan under daily heavy rewrites is essential.
5. Samsung V-NAND 3D TLC balances density, power efficiency, and reliability, giving data centers a cost-effective flash platform for mixed-use workloads without sacrificing enterprise-class stability.

Capacity Sweet

Lower capacity reference: 400 GB Higher capacity reference: 1.6 TB Capacity positioning analysis: In this enterprise SSD family, the 800 GB model sits at a practical sweet spot. Compared with the 400 GB version, it offers much better headroom for OS images, logs, hot datasets, and growth over time, reducing the risk of early capacity pressure. Compared with the 1.6 TB option, it keeps acquisition cost and $/usable-performance more balanced while delivering similar sequential and random I/O behavior for mainstream enterprise workloads. It is especially well suited for small to mid-sized virtualization clusters, such as hosting boot and application volumes for about 40 to 60 business VMs.

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