Samsung MZPLJ1T6HBJR 1.6 TB PM1735 PCIe Gen4 x8 HHHL (AIC) Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	1.6 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x8
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	HHHL (AIC)

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 92-layer 3D TLC
Drive Writes Per Day	3
Total Bytes Written	8760 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	2400 MB/s
Random Read IOPS	1000000
Random Write IOPS	250000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZPLJ1T6HBLE

Engineer's Note

Compared with the earlier MZPLJ1T6HBLE, the PM1735 MZPLJ1T6HBJR advances to a PCIe Gen4 x8 architecture with Samsung 5th-Gen 92-layer V-NAND, delivering up to 7,000 MB/s read, 2,400 MB/s write, and 1,000,000/250,000 IOPS for a clear step up in bandwidth and transaction density. With 3 DWPD and 8,760 TBW in a 1.6 TB footprint, it is a strong fit for latency-sensitive OLTP, high-concurrency virtualization, and mixed enterprise workloads that need higher performance than prior-generation drives without sacrificing endurance.

Endurance & Reliability

With an endurance rating of 8,760 TBW and 3 DWPD, the MZPLJ1T6HBJR is built to handle very intensive write workloads throughout its service life. In typical enterprise or mixed-use deployments, this level of endurance means it can reliably serve as a system or application drive for many years, with ample margin for daily data writes. For enterprise reliability, this SSD includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity during unexpected power outages. Its UBER of 1.0E-17 indicates an extremely low probability of unrecoverable bit errors, while the 2 million-hour MTBF further reflects a design aimed at stable, long-term data center operation.

Technical Specs & Insights

1. The PCIe Gen4 x8 interface, paired with top-tier sequential read bandwidth, keeps data pipelines saturated so analytics, AI, and scale-out storage nodes spend less time waiting on large dataset transfers.
2. Its strong sequential read performance accelerates backup recovery, media streaming, and model or VM image loading, helping enterprise platforms shorten job start times and improve system responsiveness.
3. With elite random read capability, this drive sustains heavy mixed-user transactional workloads, making it well suited for high-concurrency databases, virtualization clusters, and real-time query platforms.
4. A 3 DWPD endurance rating supports consistently intensive write activity across the warranty period, reducing replacement risk in logging, OLTP, and cache-tier deployments.
5. Built on Samsung 5th-Gen 92-layer 3D TLC V-NAND and tuned for very low typical latency, it delivers a strong balance of flash density, predictable QoS, and fast response times for latency-sensitive enterprise applications.

Capacity Sweet

Lower capacity: 800 GB Higher capacity: 3.2 TB At 1.6 TB, this model sits in the sweet spot of the family. Compared with the 800 GB version, it gives much better headroom for OS images, hot data, logs, and growth, reducing the risk of early capacity pressure. Compared with the 3.2 TB option, it usually delivers a more attractive cost profile while keeping essentially the same enterprise-class read/write and random IOPS behavior. This makes 1.6 TB especially well suited for mid-scale virtualization clusters, such as shared storage for about 40 to 60 mixed-application virtual machines.

FAQ