Samsung MZPLJ3T2HBJR-00AH3 3.2 TB PM1735 PCIe 4.0 x8, NVMe AIC (Half-Height Half-Length) Enterprise/Mixed-Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	3.2 TB
Usage Class	Enterprise/Mixed-Use

Interface

Host Interface	PCIe 4.0 x8, NVMe
Total Interface Bandwidth	128 Gb/s

Physical Dimension

Form Factor	AIC (Half-Height Half-Length)

Flash & Endurance

NAND Flash	Samsung V-NAND TLC
Drive Writes Per Day	3
Total Bytes Written	17520 TBW

Performance

Sequential Read	8000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1500000
Random Write IOPS	250000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZPLJ3T2HBJR-00007

Engineer's Note

Compared with the earlier MZPLJ3T2HBJR-00007 revision, the MZPLJ3T2HBJR-00AH3 is the stronger choice for PCIe Gen4 NVMe refreshes, combining 8,000/3,800 MB/s sequential performance and 1.5M/250K IOPS with 3 DWPD and 17,520 TBW at 3.2 TB. Built on Samsung V-NAND TLC, it stands out in mixed read/write database, virtualization, and analytics tiers where higher bus bandwidth and enterprise endurance deliver a clearer performance headroom than typical same-capacity Gen3-era SSDs.

Endurance & Reliability

With an endurance rating of 17,520 TBW and 3 DWPD, the MZPLJ3T2HBJR-00AH3 is built for sustained enterprise use and can comfortably handle writing its full capacity three times every day throughout its rated service life. In typical server or storage workloads, this level of endurance means the drive can serve reliably as a high-write system, cache, or application drive for many years without endurance becoming a practical concern. For enterprise reliability, built-in power loss protection helps preserve in-flight data and critical metadata if power is suddenly interrupted, reducing the risk of corruption and unclean shutdown issues. Its UBER of 1.0E-17 indicates an extremely low unrecoverable bit error rate, supporting high data integrity in business-critical environments, while the 2 million hour MTBF further reflects strong long-term operational reliability.

Technical Specs & Insights

1. The PCIe 4.0 x8 NVMe architecture provides a wide host path that keeps multi-core servers and virtualized platforms fed with data, reducing storage bottlenecks in latency-sensitive enterprise workloads.
2. Its high sequential read performance accelerates large-block data movement, helping databases, analytics clusters, and AI training nodes shorten dataset loading and checkpoint restore times.
3. The strong random read capability enables extremely fast access to small scattered data, which translates into snappier response for OLTP databases, high-density VMs, and metadata-heavy cloud applications.
4. With an endurance rating of 3 DWPD, the drive is built for sustained write-intensive use, making it a solid fit for logging, caching, and mixed enterprise workloads that overwrite data every day.
5. Samsung V-NAND TLC combined with low typical latency delivers a balanced mix of capacity efficiency, dependable QoS, and fast transaction response, supporting consistent performance under demanding data center conditions.

Capacity Sweet

Lower capacity reference: 1.6 TB Higher capacity reference: 6.4 TB At 3.2 TB, this drive sits in the sweet spot of the family. Compared with the 1.6 TB model, it gives much better headroom for data growth, mixed workloads, and overprovisioning comfort without changing the expected enterprise-class throughput profile. Compared with the 6.4 TB option, it typically delivers a more efficient balance of acquisition cost, usable capacity, and performance consistency per server. This makes 3.2 TB especially well suited for mid-scale virtualization clusters, database nodes, or hyperconverged platforms hosting roughly 40 to 70 business application instances.

FAQ