Samsung MZPLL1T6HAJQ-000D3 1.6 TB PM1725B PCIe Gen3 x8 HHHL Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1725B
Capacity	1.6 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen3 x8
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	HHHL

Flash & Endurance

NAND Flash	Samsung V-NAND 3D TLC
Drive Writes Per Day	5
Total Bytes Written	14600 TBW

Performance

Sequential Read	6200 MB/s
Sequential Write	2600 MB/s
Random Read IOPS	1000000
Random Write IOPS	150000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZPLL1T6HEHP-00007

Engineer's Note

Compared with the predecessor MZPLL1T6HEHP-00007, the Samsung PM1725B (MZPLL1T6HAJQ-000D3) delivers a clear generational step forward for latency-sensitive enterprise workloads by combining PCIe Gen3 x8 bandwidth with up to 6,200 MB/s read throughput and 1,000,000 random read IOPS in a 1.6 TB drive. Its 5 DWPD endurance and 14,600 TBW, backed by Samsung V-NAND 3D TLC, make it a stronger choice than the prior generation for high-read, write-intensive database, virtualization, and real-time analytics deployments that need both sustained performance and long service life.

Endurance & Reliability

With an endurance rating of 14,600 TBW and 5 DWPD, the MZPLL1T6HAJQ-000D3 is built for sustained enterprise write workloads and can comfortably handle frequent daily data updates over its service life. In typical server or system-disk use, this level of endurance means the drive can be deployed with high confidence for many years, including long-term 24/7 operation without concern over normal write wear. Its enterprise reliability is further strengthened by power loss protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is suddenly interrupted. Combined with an UBER of 1.0E-17 and a 2 million hour MTBF, the drive is designed to deliver extremely low uncorrectable error rates and dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x8 interface, paired with 6200 MB/s sequential read bandwidth, keeps large databases, VM images, and analytics datasets moving fast enough to reduce application startup and bulk data access bottlenecks.
2. With 1,000,000 K random read IOPS, the drive can sustain extremely high transaction concurrency, making it well suited for latency-sensitive OLTP, virtualization, and metadata-heavy enterprise workloads.
3. A 5 DWPD endurance rating gives enterprises the confidence to run write-intensive applications such as logging, caching, and mixed database workloads day after day without premature wear concerns.
4. Samsung V-NAND 3D TLC provides a strong balance of density, cost efficiency, and enterprise-grade reliability, helping data centers scale capacity without giving up predictable performance.
5. The typical 90 µs latency supports consistently fast response times, which translates into smoother QoS for real-time services, virtualized infrastructure, and performance-critical storage tiers.

Capacity Sweet

Lower capacity reference: 800 GB Higher capacity reference: 3.2 TB In this series, the 1.6 TB model sits at a practical sweet spot. Compared with the 800 GB version, it offers much better headroom for OS images, application growth, logs, and overprovisioning, reducing early capacity pressure in enterprise environments. Compared with the 3.2 TB option, it keeps acquisition cost and power budget more controlled while delivering essentially the same class of sequential throughput and random IOPS. It is best suited for mid-scale deployments, such as a 3-node virtualization cluster, mixed database workloads, or dense boot and caching tiers.

FAQ