Samsung MZPLL6T4HMLA-000D3 6.4TB PM1725b Series PCIe Gen 3.0 x8, NVMe HHHL (AIC) Enterprise Data Center / Write Intensive Solid State Drive

General

Brand	Samsung
Model	PM1725b Series
Capacity	6.4TB
Usage Class	Enterprise Data Center / Write Intensive

Interface

Host Interface	PCIe Gen 3.0 x8, NVMe
Total Interface Bandwidth	8 Gb/s

Physical Dimension

Form Factor	HHHL (AIC)

Flash & Endurance

NAND Flash	Samsung 64-layer 3D V-NAND TLC
Drive Writes Per Day	5
Total Bytes Written	58400 TBW

Performance

Sequential Read	6200 MB/s
Sequential Write	2900 MB/s
Random Read IOPS	1080000
Random Write IOPS	170000
Average Latency	90 μs

Reliability

Mean Time Between Failures	2.0 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZPLL6T4HMLA-00007

Engineer's Note

Compared with predecessor MZPLL6T4HMLA-00007, the MZPLL6T4HMLA-000D3 is the later PM1725b 6.4TB revision, leveraging Samsung 64-layer 3D V-NAND TLC to deliver a stronger balance of 6,200/2,900 MB/s throughput, 1,080,000/170,000 IOPS, and 58,400 TBW enterprise endurance. It is an especially strong fit for write-intensive OLTP databases and dense virtualization nodes, where its 5 DWPD rating and PCIe Gen 3.0 x8 NVMe bandwidth provide more usable endurance per terabyte than typical same-generation TLC NVMe SSDs.

Endurance & Reliability

With an endurance rating of 58,400 TBW and 5 DWPD, the MZPLL6T4HMLA-000D3 is built for very write-intensive enterprise workloads, allowing the full drive capacity to be written five times per day throughout its rated service life. In practical terms, this level of endurance is far beyond typical OS, boot, logging, and general server application needs, so when used as a system or infrastructure drive it provides long-term, worry-free operation under normal deployment conditions. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity during unexpected power interruptions. Its UBER of 1.0E-17, together with a 2 million hour MTBF, indicates an enterprise-class design focused on extremely low uncorrectable read error rates and dependable operation in mission-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x8 NVMe architecture provides a wide, low-overhead data path that keeps enterprise servers fed with storage bandwidth, helping virtualized, analytics, and scale-out workloads avoid host-side bottlenecks.
2. Its class-leading sequential read performance accelerates large-block data movement, reducing wait time for database scans, backup restores, media processing, and big-data ingestion.
3. Extremely high random read capability enables the drive to sustain massive small-block access at queue depth, which is critical for OLTP databases, VDI boot storms, and latency-sensitive cloud applications.
4. Built with Samsung 64-layer 3D V-NAND TLC and rated for heavy daily rewrites, it delivers the endurance needed for write-intensive enterprise deployments while preserving the cost efficiency of TLC flash.
5. With typical latency in the tens of microseconds, the drive helps applications respond faster and more consistently, improving QoS for real-time transactions, caching tiers, and high-concurrency service environments.

Capacity Sweet

Lower capacity reference: 3.2TB Higher capacity reference: 12.8TB Capacity positioning analysis: In this series, the 6.4TB model sits at a practical sweet spot. Compared with the 3.2TB version, it gives much better headroom for data growth, denser consolidation, and longer refresh cycles without changing the expected enterprise performance profile. Compared with the 12.8TB option, it usually delivers a more efficient balance of acquisition cost, usable capacity, and performance consistency, making it easier to scale economically. It is especially well suited for mid-sized virtualization clusters, such as shared storage for about 40 to 60 business application VMs.

FAQ