Samsung MZQLB3T8HALS-00007 3.84 TB PM983 PCIe Gen3 x4 U.2 Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	8 Gb/s

Physical Dimension

Form Factor	U.2

Flash & Endurance

NAND Flash	Samsung V-NAND 64-layer 3D TLC
Drive Writes Per Day	1.3
Total Bytes Written	5466 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2000 MB/s
Random Read IOPS	540000
Random Write IOPS	50000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZILT1T9HAJQAD3

Engineer's Note

Compared with the earlier MZILT1T9HAJQAD3, the Samsung PM983 MZQLB3T8HALS-00007 moves to 64-layer V-NAND TLC and a 3.84TB PCIe Gen3 x4 design, delivering a stronger capacity-per-slot profile with up to 3,200/2,000 MB/s throughput and 540K/50K IOPS for read-intensive scale-out infrastructure. Its 1.3 DWPD endurance and 5,466TBW rating make it a more deployment-efficient choice for virtualization clusters, cloud boot volumes, and high-density content platforms that need enterprise endurance without stepping up to a higher-cost mixed-use SSD tier.

Endurance & Reliability

With an endurance rating of 5,466 TBW and 1.3 DWPD, the MZQLB3T8HALS-00007 is built to sustain heavy write activity over its service life, far beyond the needs of typical OS, boot, and mainstream enterprise application workloads. In practical terms, under normal system-disk or mixed read/write server usage, this level of endurance supports many years of reliable operation and provides strong confidence for long-term deployment planning. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity during unexpected power interruptions. Its UBER of 1.0E-17 indicates an extremely low probability of unrecoverable bit errors, supporting high data integrity requirements in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface provides a mature, widely compatible host connection that lets enterprise servers scale storage performance without requiring a platform refresh.
2. Its strong sequential read capability accelerates large-block data movement, reducing wait time for analytics jobs, VM boot storms, and backup restore operations.
3. The high random read performance supports dense virtualization and database environments by serving massive volumes of small I/O requests with minimal queue buildup.
4. Built on Samsung’s 64-layer 3D TLC V-NAND and rated for sustained enterprise write intensity, it delivers a practical balance of capacity, endurance, and cost for always-on production workloads.
5. The very low typical latency helps latency-sensitive applications respond faster and more consistently, improving QoS in transactional systems and real-time service tiers.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB At 3.84 TB, this drive sits at the sweet spot of the family. Compared with the 1.92 TB model, it gives meaningfully more headroom for dataset growth, VM sprawl, and overprovisioning flexibility without changing the expected enterprise-class read/write and random IOPS profile. Compared with the 7.68 TB option, it usually delivers the best balance between acquisition cost, usable capacity, and consistent performance per dollar. It is especially well suited for mid-scale virtualization clusters, such as hosting boot and application volumes for roughly 40 to 60 virtual machines.

FAQ