Samsung MZQLB3T8HALS 3.84 TB PM983 PCIe Gen3 x4 U.2 Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM983
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen3 x4
Total Interface Bandwidth	8 Gb/s

Physical Dimension

Form Factor	U.2

Flash & Endurance

NAND Flash	Samsung V-NAND 64-layer 3D TLC
Drive Writes Per Day	1.3
Total Bytes Written	5466 TBW

Performance

Sequential Read	3200 MB/s
Sequential Write	2000 MB/s
Random Read IOPS	540000
Random Write IOPS	50000
Average Latency	85 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-QLB3T80

Engineer's Note

Compared with the earlier MZ-QLB3T80, the PM983 MZQLB3T8HALS advances to Samsung 64-layer 3D TLC V-NAND and delivers a stronger enterprise balance of endurance and capacity, with 1.3 DWPD and 5,466 TBW at 3.84TB for longer service life in write-active deployments. Its 3,200/2,000 MB/s throughput and 540,000 random-read IOPS on a PCIe Gen3 x4 interface make it a particularly strong fit for virtualized infrastructure, scale-out storage, and read-centric database tiers that need higher density without stepping up to a higher-cost performance class.

Endurance & Reliability

With an endurance rating of 5,466 TBW and 1.3 DWPD, the MZQLB3T8HALS is designed to sustain heavy daily write activity across enterprise use cases. In typical server or mixed-workload deployments, this level of endurance provides long-term confidence and is more than sufficient for use as a reliable system or application drive over many years of operation. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps safeguard in-flight data and mapping tables during unexpected power interruptions, reducing the risk of data corruption. Its UBER rating of 1.0E-17, together with a 2 million-hour MTBF, reflects a very low likelihood of uncorrectable read errors and supports dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen3 x4 interface, paired with strong sequential read throughput, enables fast database snapshots, VM boots, and large dataset ingestion without saturating mainstream server backplanes.
2. With up to 540,000 random read IOPS, this SSD sustains responsive performance for high-concurrency OLTP databases, virtual desktop farms, and read-heavy cloud workloads.
3. A 1.3 DWPD endurance rating gives enterprises the write resilience needed for mixed-use deployments, helping extend service life in always-on servers with steady daily data churn.
4. Samsung 64-layer 3D TLC V-NAND balances cost efficiency, density, and reliability, making it well suited for scaling enterprise storage while maintaining predictable performance characteristics.
5. Typical latency of 85 µs helps reduce application wait time, improving transaction responsiveness and QoS consistency in latency-sensitive environments such as real-time analytics and virtualized infrastructure.

Capacity Sweet

Lower capacity reference: 1.92 TB Higher capacity reference: 7.68 TB In this series, 3.84 TB is the sweet-spot capacity because it delivers noticeably more headroom than 1.92 TB for OS images, application stacks, logs, and short-term data growth, while keeping the same enterprise-class read/write and random IOPS profile. Compared with 7.68 TB, it avoids overprovisioning budget on fleets that do not need maximum density, making cost control easier without giving up mainstream performance. It is best suited for mid-scale deployments, such as a virtualization cluster of about 40 to 60 mixed-workload virtual machines.

FAQ