Samsung MZWLJ15THALA-0007 15.36TB PM1733 PCIe Gen4 x4 2.5-inch Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	15.36TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	2.5-inch

Flash & Endurance

NAND Flash	Samsung V-NAND TLC
Drive Writes Per Day	1
Total Bytes Written	28032 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	100 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZ-XLN15T0

Engineer's Note

Compared with the previous-generation MZ-XLN15T0, the PM1733 MZWLJ15THALA-0007 steps up to PCIe Gen4 x4 and delivers up to 7,000/3,800 MB/s with 1,450,000 random-read IOPS, giving it a clear advantage in host-side bandwidth and read-intensive transaction performance. Its 15.36TB capacity, Samsung V-NAND TLC, and 28,032TB TBW at 1 DWPD make it a stronger fit for dense virtualization, large-scale analytics, and content-serving tiers that need more usable flash capacity without sacrificing enterprise endurance.

Endurance & Reliability

With an endurance rating of 28,032 TBW and 1 DWPD, the MZWLJ15THALA-0007 is designed to handle the equivalent of writing its full capacity once per day throughout its service life, which is more than sufficient for typical enterprise boot, system, and mixed read/write workloads. In practical terms, under normal operating conditions this level of endurance provides long-term write durability and can comfortably support continuous daily use for many years without endurance becoming a concern. For enterprise reliability, the drive includes Power Loss Protection (PLP), which helps preserve in-flight data and protects metadata integrity if power is suddenly interrupted. Its UBER of 1.0E-17 indicates an extremely low uncorrectable bit error rate, supporting high data integrity expectations in mission-critical server and storage environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with top-tier sequential read bandwidth, removes storage bottlenecks for data-intensive workloads such as AI model staging, large-scale analytics, and high-speed backup restore.
2. Extremely high random read performance enables dense virtualization, metadata-heavy databases, and content delivery platforms to serve far more concurrent requests with consistently fast response times.
3. A 1 DWPD endurance profile is well suited for read-centric enterprise deployments, giving operators predictable lifespan and lower replacement risk in mainstream cloud and scale-out infrastructure.
4. Samsung V-NAND TLC provides an effective balance of capacity, performance, and cost efficiency, making it a strong fit for enterprise fleets that need dependable service economics without sacrificing responsiveness.
5. Typical latency at this class helps keep transaction paths tight and tail response under control, which is critical for latency-sensitive applications such as online services, caching layers, and real-time analytics.

Capacity Sweet

Lower capacity in the same family: 7.68TB Higher capacity in the same family: 30.72TB At 15.36TB, this model sits in the sweet spot of the series. Compared with 7.68TB, it gives much better capacity headroom for data growth, denser server builds, and fewer drive slots consumed, while keeping enterprise-class sequential throughput and random IOPS essentially in the same range. Compared with 30.72TB, it usually delivers a more efficient cost-per-performance balance, with lower acquisition cost and easier fleet standardization. It is best suited for 8 to 12 drive NVMe servers targeting about 120TB to 180TB raw capacity per node.

FAQ