Samsung MZWLJ1T6HBJR-00AD3 1.6 TB PM1735 PCIe Gen4 x4 2.5 inch Mixed Use Solid State Drive

General

Brand	Samsung
Model	PM1735
Capacity	1.6 TB
Usage Class	Mixed Use

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	2.5

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen TLC
Drive Writes Per Day	3
Total Bytes Written	8760 TBW

Performance

Sequential Read	6200 MB/s
Sequential Write	2300 MB/s
Random Read IOPS	1000000
Random Write IOPS	180000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLK1T6HCHP-00005

Engineer's Note

Compared with the previous-generation MZWLK1T6HCHP-00005, the PM1735 MZWLJ1T6HBJR-00AD3 advances to a PCIe Gen4 x4 platform with Samsung 5th-Gen V-NAND TLC, delivering up to 6,200 MB/s sequential read, 1,000,000 random-read IOPS, and 8,760 TBW endurance at 3 DWPD. This 1.6 TB model is a strong fit for latency-sensitive OLTP databases, virtualized infrastructure, and mixed read/write enterprise workloads that need higher host bandwidth and stronger sustained endurance than the prior generation.

Endurance & Reliability

With an endurance rating of 8,760 TBW and 3 DWPD, the MZWLJ1T6HBJR-00AD3 is built to handle very heavy write workloads over its service life. In typical enterprise use, this means it can comfortably serve as a high-write system or application drive for many years, and in lighter OS or boot-drive scenarios it provides more than enough endurance for long-term, worry-free deployment. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and protects metadata integrity if power is unexpectedly interrupted, reducing the risk of corruption and unplanned recovery events. Its UBER rating of 1.0E-17, together with a 2 million hour MTBF, reflects a high-integrity design intended to deliver very low uncorrectable error rates and dependable operation in business-critical environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with high sequential bandwidth, accelerates large dataset movement and shortens backup, restore, and analytics job windows in enterprise servers.
2. Its class-leading random read performance enables databases, virtualization clusters, and high-concurrency cloud workloads to serve massive numbers of small requests with consistently fast response.
3. A 3 DWPD endurance rating makes it suitable for write-intensive enterprise applications such as OLTP, caching tiers, and mixed-use infrastructure that must sustain heavy daily rewrites over the drive’s service life.
4. Samsung 5th-Gen V-NAND TLC balances enterprise-grade capacity, performance, and reliability, helping data centers control cost without sacrificing predictable workload behavior.
5. The ultra-low typical latency improves application responsiveness and tail-latency control, which is especially valuable for real-time analytics, financial transactions, and latency-sensitive virtualized environments.

Capacity Sweet

Lower capacity reference: 800 GB Higher capacity reference: 3.2 TB In this series, the 1.6 TB point is the sweet spot for mainstream enterprise deployment. Versus the 800 GB option, it gives much better headroom for data growth, overprovisioning efficiency, and workload consolidation without changing the expected enterprise-class sequential throughput or random IOPS profile. Versus the 3.2 TB model, it usually lands at a more attractive cost point while still delivering nearly the same practical performance envelope. It is especially well suited for mid-scale virtualization clusters, such as hosting OS and application volumes for roughly 40 to 60 business workloads.

FAQ