Samsung MZWLJ1T9HBJR-0007C 1.92 TB PM1733 PCIe Gen4 x4 U.2 Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	U.2

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	6400 MB/s
Sequential Write	2100 MB/s
Random Read IOPS	900000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZQLB3T8HALS

Engineer's Note

Compared with the previous-generation MZQLB3T8HALS, the Samsung PM1733 (MZWLJ1T9HBJR-0007C) advances to a PCIe Gen4 x4 interface and 5th-Gen V-NAND, delivering up to 6,400 MB/s sequential read and 900,000 random read IOPS for a clear uplift in host-side bandwidth and transaction responsiveness. With 1.92 TB capacity, 1 DWPD, and 3,504 TBW, this SSD is a strong fit for read-intensive virtualization clusters, scale-out database nodes, and analytics tiers that need Gen4 performance density with reliable enterprise TLC endurance.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, the MZWLJ1T9HBJR-0007C is designed to handle writing its full usable capacity once per day across the warranty period, which is more than sufficient for typical enterprise boot, system, and read-intensive application workloads. In practical terms, for common OS, logging, and general server usage, this level of endurance supports long-term deployment with substantial write headroom and can be used as a system drive for many years with confidence. Its enterprise reliability features further reduce operational risk: built-in Power Loss Protection (PLP) helps preserve in-flight data and protects metadata integrity if power is suddenly interrupted, which is critical for server and storage environments. An UBER of 1.0E-17 indicates an extremely low probability of unrecoverable bit errors during reads, supporting high data integrity, while the 2 million-hour MTBF reflects a design intended for stable, continuous operation in enterprise systems.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface, paired with up to 6400 MB/s sequential read bandwidth, enables much faster dataset streaming, VM boot, and analytics job startup in bandwidth-hungry enterprise servers.
2. With 900,000 K IOPS random read performance, the drive can sustain massive parallel access from databases, virtualization clusters, and high-concurrency cloud workloads without becoming a bottleneck.
3. A 1 DWPD endurance rating gives enterprises the confidence to handle consistent daily full-drive writes throughout the warranty life, making it well suited for read-intensive but continuously updated production environments.
4. Samsung V-NAND 5th-Gen 9x-Layer 3D TLC balances density, power efficiency, and reliability, helping data centers scale capacity economically without sacrificing enterprise-class flash behavior.
5. The 95 µs typical latency helps reduce tail response times, which is critical for transactional systems, real-time analytics, and latency-sensitive service-level commitments.

Capacity Sweet

Lower-capacity reference: 960 GB Higher-capacity reference: 3.84 TB Capacity positioning analysis: In this SSD family, 1.92 TB is the practical sweet spot. Compared with the 960 GB model, it offers much better headroom for OS images, application binaries, logs, and short-term data growth, reducing early capacity pressure in enterprise environments. Compared with the 3.84 TB version, it typically delivers a better balance of acquisition cost, usable capacity, and near-equivalent mainstream enterprise performance. This makes it especially suitable for medium-scale virtualization clusters, such as hosting boot and application volumes for around 40–60 general-purpose virtual machines per storage node.

FAQ