Samsung MZWLJ1T9HBJR-00AAZ 1.92 TB PM1733 PCIe Gen4 x4 U.2 Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	1.92 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	16 Gb/s

Physical Dimension

Form Factor	U.2

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	3504 TBW

Performance

Sequential Read	6400 MB/s
Sequential Write	2100 MB/s
Random Read IOPS	900000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLJ1T9HBJR-0007C

Engineer's Note

Compared with MZWLJ1T9HBJR-0007C, the MZWLJ1T9HBJR-00AAZ PM1733 updates the platform with Samsung 5th-Gen V-NAND and PCIe Gen4 x4 connectivity, delivering up to 6,400/2,100 MB/s and 900K/115K IOPS to unlock higher per-drive bandwidth and read concurrency in the same 1.92 TB class. With 1 DWPD and 3,504 TBW, it is a strong fit for read-centric virtualization, scale-out database, and analytics cache tiers that need Gen4 performance without moving to a higher-endurance, higher-cost SSD tier.

Endurance & Reliability

With an endurance rating of 3504 TBW and 1 DWPD, the MZWLJ1T9HBJR-00AAZ is built to handle writing its full capacity once per day over its rated service life, which is more than sufficient for typical enterprise boot, system, and mixed-read workloads. In practical terms, under normal OS, application, and logging usage, this level of endurance supports long-term deployment with strong margin and can comfortably serve as a reliable system drive for many years. For enterprise reliability, built-in Power Loss Protection (PLP) helps preserve in-flight data and protects metadata integrity if power is interrupted unexpectedly, reducing the risk of corruption and unplanned recovery events. Its UBER of 1.0E-17 indicates an extremely low unrecoverable bit error rate, meaning data reads remain highly dependable at scale, while the 2 million-hour MTBF further supports confidence in continuous operation.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface provides the bandwidth headroom needed to keep modern virtualization, analytics, and AI servers fed without storage becoming the bottleneck.
2. Its strong sequential read performance accelerates large-block workloads such as database snapshots, media streaming, and model or dataset loading into memory.
3. The high random read capability is especially valuable for transaction-heavy applications, enabling faster response under mixed VM, OLTP, and metadata-intensive workloads.
4. With an enterprise endurance profile of one full drive rewrite per day, backed by Samsung’s advanced V-NAND 3D TLC architecture, this SSD is well suited for read-centric infrastructure that still demands predictable long-term reliability.
5. The very low typical latency helps reduce tail response times, improving user experience and service consistency in latency-sensitive cloud and database environments.

Capacity Sweet

Lower capacity: 960 GB Higher capacity: 3.84 TB At 1.92 TB, this SSD sits at the sweet spot of the series. Compared with the 960 GB model, it offers meaningfully better headroom for OS images, application binaries, logs, and working datasets, reducing the need for early capacity expansion. Compared with the 3.84 TB option, it delivers a more balanced acquisition cost while retaining essentially the same enterprise-class throughput and IOPS profile. This makes 1.92 TB especially well suited for mid-scale virtualization clusters, database nodes, and hyperconverged infrastructure requiring predictable performance with efficient capacity planning.

FAQ