Samsung MZWLJ3T8HBLS-00007 3.84 TB PM1733 PCIe Gen4 x4 U.2 (2.5") Read Intensive Solid State Drive

General

Brand	Samsung
Model	PM1733
Capacity	3.84 TB
Usage Class	Read Intensive

Interface

Host Interface	PCIe Gen4 x4
Total Interface Bandwidth	64 Gb/s

Physical Dimension

Form Factor	U.2 (2.5")

Flash & Endurance

NAND Flash	Samsung V-NAND 5th-Gen 9x-Layer 3D TLC
Drive Writes Per Day	1
Total Bytes Written	7008 TBW

Performance

Sequential Read	7000 MB/s
Sequential Write	3800 MB/s
Random Read IOPS	1450000
Random Write IOPS	115000
Average Latency	95 μs

Reliability

Mean Time Between Failures	2 Million Hours
Uncorrectable Bit Error Rate	1.0×10⁻¹⁷
Power Loss Protection	Yes

Part Number

MPN	MZWLJ3T8HBLS

Engineer's Note

Compared with the earlier MZWLJ3T8HBLS, the MZWLJ3T8HBLS-00007 is the later PM1733 production revision, giving platform teams the same proven 3.84 TB PCIe Gen4 x4 performance envelope—up to 7,000/3,800 MB/s and 1.45M/115K IOPS—with tighter qualification control for long-life enterprise deployments. Its combination of Samsung 5th-Gen V-NAND TLC, 1 DWPD endurance, and 7,008 TBW makes it a strong fit for latency-sensitive virtualization, scale-out databases, and mixed read/write cloud workloads that need Gen4 bandwidth without stepping up to higher-cost high-endurance tiers.

Endurance & Reliability

With an endurance rating of 7008 TBW and 1 DWPD, the MZWLJ3T8HBLS-00007 is designed to sustain a full drive write per day across its warranty period, which is more than sufficient for typical enterprise system, boot, and read-intensive application workloads. In practical terms, for common OS, virtualization, and infrastructure deployments, this level of endurance provides long-term write headroom and can support many years of stable operation without endurance concerns under normal usage. Its enterprise reliability profile is further strengthened by Power Loss Protection (PLP), which helps preserve in-flight data and metadata during unexpected power interruptions, reducing the risk of corruption and unplanned recovery events. An UBER of 1.0E-17, together with a 2 million hour MTBF, indicates a very low probability of uncorrectable bit errors and a robust design standard expected for business-critical storage environments.

Technical Specs & Insights

1. The PCIe Gen4 x4 interface provides the bandwidth headroom needed to keep modern database, virtualization, and analytics servers fed without the storage bus becoming a bottleneck.
2. With sequential read performance reaching 7000 MB/s, this SSD accelerates large-block workloads such as data warehouse scans, backup restores, and AI model loading to reduce job completion time.
3. Its 1,450,000 K random read IOPS enables highly responsive performance for transaction-heavy applications like OLTP databases, metadata services, and dense virtual desktop environments.
4. A 1 DWPD endurance rating makes it a strong fit for read-centric enterprise deployments that still require predictable daily rewrite capability over the drive’s service life.
5. Built on Samsung V-NAND 5th-Gen 9x-Layer 3D TLC and delivering a typical latency of 95 µs, it combines mature flash efficiency with fast response times that help stabilize QoS in latency-sensitive production systems.

Capacity Sweet

Lower-capacity reference: 1.92 TB Higher-capacity reference: 7.68 TB At 3.84 TB, this drive sits in the sweet spot of the series. Compared with the 1.92 TB model, it gives substantially more headroom for data growth, overprovisioning, and workload consolidation without changing the expected enterprise-class read/write and random IOPS profile. Compared with the 7.68 TB option, it typically delivers a better cost-per-deployment balance, avoiding unnecessary capacity spend while preserving essentially the same performance behavior. It is especially well suited for mid-scale virtualization, such as shared storage for about 60-120 mixed enterprise workloads or databases.

FAQ